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Product Code: SID4230.0

Cas No: 1111-74-6

R&D quantities:

50 g

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Boiling Point: -20°

EINECS Number: 214-184-7

Melting Point: -150°

Molecular Weight: 60.17

Alternative Name: 2MS

Specific Gravity: 0.68

HMIS Key: 3-4-1-X

Hydrolytic Sensitivity: 3: reacts with aqueous base

Formula: C2H8Si


Application: Generates cubic silicon carbide by plasma CVD.1
Epitaxial growth of cubic silicon carbide carried out by triode plasma CVD.2

Reference: 1. Hashim, A. et al. Semiconductor Electronics, IEE Int'l. Conf. Proc. 2006, 646.
2. Yasuiet, K. et al. Appl. Surf. Sci. 2000, 159, 556.

Additional Properties: Dipole moment: 0.75 debye
?Hcomb: -624 kcal/mole
Critical temperature: 125°
?Hform: -23 kcal/mole
?Hvap: 5.5 kcal/mole
CVD precursor for low k dielectric layers in damascene metallization applications
Vapor pressure, -80° 30 mm