1111-74-6

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DIMETHYLSILANE

Product Code: SID4230.0

Cas No: 1111-74-6

R&D quantities:

50 g
$468.00

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Dialkyl Silane Reducing Agent

Organosilanes are hydrocarbon-like and possess the ability to serve as both ionic and free-radical reducing agents. These reagents and their reaction by-products are safer and more easily handled and disposed than many other reducing agents. The metallic nature of silicon and its low electronegativity relative to hydrogen lead to polarization of the Si-H bond yielding a hydridic hydrogen and a milder reducing agent compared to aluminum-, boron-, and other metal-based hydrides. A summary of some key silane reductions are presented in Table 1 of the Silicon-Based Reducing Agents brochure.

Volatile Carbosilane

Carbosilanes are compounds in which the elements of silicon and carbon alternate in a molecular framework or polymeric backbone in an approximate ratio of 1:1. By appropriate selection of the carbosilane precursor and deposition conditions the silicon carbide framework can be shifted toward substituted silicon and diamond-like structures.

Dimethylsilane; Dimethylsilyldihydride; 2MS
  • ΔHcomb: -2,612 kJ/mol
  • ΔHform: -96 kJ/mol
  • ΔHvap: 23.0 kJ/mol
  • Dipole moment: 0.75 debye
  • Vapor pressure, -80 °C: 30 mm
  • CVD precursor for low k dielectric layers in damascene metallization applications
  • Generates cubic silicon carbide by plasma CVD
  • Epitaxial growth of cubic silicon carbide carried out by triode plasma CVD
  • Very low boiling point silane that is a gas at atmospheric conditions
  • Extensive review of silicon based reducing agents: Larson, G.; Fry, J. L. "Ionic and Organometallic-Catalyzed Organosilane Reductions", Wipf, P., Ed.; Wiley, 2007
  • Boiling Point: -20°

    EINECS Number: 214-184-7

    Melting Point: -150°

    Molecular Weight: 60.17

    Alternative Name: 2MS

    Specific Gravity: 0.68

    HMIS Key: 3-4-1-X

    Hydrolytic Sensitivity: 3: reacts with aqueous base

    Formula: C2H8Si

    TSCA: TSCA

    Application: Generates cubic silicon carbide by plasma CVD.1
    Epitaxial growth of cubic silicon carbide carried out by triode plasma CVD.2

    Reference: 1. Hashim, A. et al. Semiconductor Electronics, IEE Int'l. Conf. Proc. 2006, 646.
    2. Yasuiet, K. et al. Appl. Surf. Sci. 2000, 159, 556.

    Additional Properties: Dipole moment: 0.75 debye
    ?Hcomb: -624 kcal/mole
    Critical temperature: 125°
    ?Hform: -23 kcal/mole
    ?Hvap: 5.5 kcal/mole
    CVD precursor for low k dielectric layers in damascene metallization applications
    Vapor pressure, -80° 30 mm