To search by structure, left click in the box below to display the chemdraw toolbar. Then, draw the chemical structure of interest in the box using the toolbar. When your structure is complete, click “Search by Name” or “Search by SMILES” to generate the product name or SMILES respectively. This feature will search within the Gelest product database for matching chemical names or SMILES. Note: In cases where Gelest uses alternate chemical names, it may be necessary to search for the product of interest by its CAS#.
All structures are computer generated. Please rely on the product data below for placing your order. If you see any errors in structures, please email customer service so that they can be addressed.
DIMETHYLSILANE
Boiling Point: -20°
EINECS Number: 214-184-7
Melting Point: -150°
Molecular Weight: 60.17
Alternative Name: 2MS
Specific Gravity: 0.68
HMIS Key: 3-4-1-X
Hydrolytic Sensitivity: 3: reacts with aqueous base
Formula: C2H8Si
TSCA: TSCA
Application: Generates cubic silicon carbide by plasma CVD.1
Epitaxial growth of cubic silicon carbide carried out by triode plasma CVD.2
Reference: 1. Hashim, A. et al. Semiconductor Electronics, IEE Int'l. Conf. Proc. 2006, 646.
2. Yasuiet, K. et al. Appl. Surf. Sci. 2000, 159, 556.
Additional Properties: Dipole moment: 0.75 debye?Hcomb: -624 kcal/moleCritical temperature: 125°?Hform: -23 kcal/mole?Hvap: 5.5 kcal/moleCVD precursor for low k dielectric layers in damascene metallization applicationsVapor pressure, -80° 30 mm
Gases
Silanes
Key Organosilane Reductions – Larson
The Synthesis of Gliflozins – Larson
Organosilane Reductions with Polymethylhydrosiloxanes – Larson
Tetramethyldisiloxane: A Practical Organosilane Reducing Agent – Larson
Synthesizing Low-k CVD Materials for Fab Use – Arkles et al.
Low Temperature Inorganic CVD of Ti-Si-N Diffusion Barrier Liners for Gigascale Copper Interconnect Applications – Eisenbraun et al.
Silicon Nitride Films by Atmospheric Pressure CVD
Understanding ALD MLD and SAMs as they enter the fab – Arkles, Goff, & Kaloyeros