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DIMETHYLSILANE
Boiling Point: -20°
EINECS Number: 214-184-7
Melting Point: -150°
Molecular Weight: 60.17
Alternative Name: 2MS
Specific Gravity: 0.68
HMIS Key: 3-4-1-X
Hydrolytic Sensitivity: 3: reacts with aqueous base
Formula: C2H8Si
TSCA: TSCA
Application: Generates cubic silicon carbide by plasma CVD.1
Epitaxial growth of cubic silicon carbide carried out by triode plasma CVD.2
Reference: 1. Hashim, A. et al. Semiconductor Electronics, IEE Int'l. Conf. Proc. 2006, 646.
2. Yasuiet, K. et al. Appl. Surf. Sci. 2000, 159, 556.
Additional Properties: Dipole moment: 0.75 debye?Hcomb: -624 kcal/moleCritical temperature: 125°?Hform: -23 kcal/mole?Hvap: 5.5 kcal/moleCVD precursor for low k dielectric layers in damascene metallization applicationsVapor pressure, -80° 30 mm
Gases
Silanes
Methyl Silanes
Organosilicon & Metal-organic Precursors for Microelectronics & Optoelectronics
Silicon-Based Reducing Agents
Enabling Synthetic Organic Transformations
Volatile Carbosilanes
Key Organosilane Reductions – Larson
The Synthesis of Gliflozins – Larson
Organosilane Reductions with Polymethylhydrosiloxanes – Larson
Tetramethyldisiloxane: A Practical Organosilane Reducing Agent – Larson
Synthesizing Low-k CVD Materials for Fab Use – Arkles et al.
Low Temperature Inorganic CVD of Ti-Si-N Diffusion Barrier Liners for Gigascale Copper Interconnect Applications – Eisenbraun et al.
Silicon Nitride Films by Atmospheric Pressure CVD
Understanding ALD MLD and SAMs as they enter the fab – Arkles, Goff, & Kaloyeros