1111-74-6

All structures are computer generated. Please rely on the product data below for placing your order. If you see any errors in structures, please email customer service so that they can be addressed.

DIMETHYLSILANE

Product Code: SID4230.0

Cas No: 1111-74-6

R&D quantities:

50 g
$468.00

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Boiling Point: -20°

EINECS Number: 214-184-7

Melting Point: -150°

Molecular Weight: 60.17

Alternative Name: 2MS

Specific Gravity: 0.68

HMIS Key: 3-4-1-X

Hydrolytic Sensitivity: 3: reacts with aqueous base

Formula: C2H8Si

TSCA: TSCA

Application: Generates cubic silicon carbide by plasma CVD.1
Epitaxial growth of cubic silicon carbide carried out by triode plasma CVD.2

Reference: 1. Hashim, A. et al. Semiconductor Electronics, IEE Int'l. Conf. Proc. 2006, 646.
2. Yasuiet, K. et al. Appl. Surf. Sci. 2000, 159, 556.

Additional Properties: Dipole moment: 0.75 debye
?Hcomb: -624 kcal/mole
Critical temperature: 125°
?Hform: -23 kcal/mole
?Hvap: 5.5 kcal/mole
CVD precursor for low k dielectric layers in damascene metallization applications
Vapor pressure, -80° 30 mm