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Product Code: SID3415.0

Cas No: 542-91-6

R&D quantities:

10 g
50 g

Interested in a Commercial Order?

Boiling Point: 56°

EINECS Number: 208-834-9

Melting Point: -132°

Molecular Weight: 88.22

Specific Gravity: 0.6837

Flashpoint: -20°C (-4°F)

HMIS Key: 3-4-1-X

Hydrolytic Sensitivity: 3: reacts with aqueous base

Formula: C4H12Si

Refractive Index: 1.3921


Application: Employed in oxygen plasma assisted deposition of SiO2 for microelectronics.1
Directs the borylation of N-containing heterocycles.2
Allows direct functionalization of C-H bonds. Forms 1,3-diols from alcohols in good yields.3
Reduces esters to aldehydes in excellent yields.4

Reference: 1. Levy, R. et al. Chem. Mater. 1993, 5, 1710.
2. Robbins, D. W. et al. J. Am. Chem. Soc.. 2010, 132, 4068.
3. Simmons, E. M.; Hartwig, J. F. Nature 2012, 483, 70; DOI: 10.1038/nature10785
4. Cheng, C.; Burkhart, M. Angew. Chem., Int. Ed. Engl. 2012, 51, 9422.

Additional Properties: 218
?Hcomb: -951 kcal/mole
?Hform: -37 kcal/mole
?Hvap: 7.18 kcal/mole