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Boiling Point: 134-5°
EINECS Number: 219-137-4
Melting Point: -69°
Molecular Weight: 240.51
Alternative Name: D'4; TMCTS
Specific Gravity: 0.9912
Flashpoint: 31°C (88°F)
HMIS Key: 2-3-1-X
Hydrolytic Sensitivity: 3: reacts with aqueous base
Refractive Index: 1.3870
Application: Cyclic monomer- undergoes hydrosilylation reactions.1
Forms hybrid inorganic-organic polymers with dienes suitable for circuit board resins.2
Forms gate dielectrics by CVD.3
Reference: 1. Michalczyk, M. et al. Chem. Mater. 1993, 5, 1687.
2. Leibfried, R. U.S. Patent 4,900,799, 1990.
3. Wang, A. et al. Res. Soc. Symp. Proc. 1997, 424, 281.
Additional Properties: 270?Hcomb: 1,268 kcal/moleCritical temperature: 278°?Hvap: 42.5 kcal/moleIn presence of oxygen plasma generates SiO2 films for microelectronicsVapor pressure, 20°: 7.0 mm