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Product Code: SIT7123.0

Cas No: 13465-84-4

50 g
10 g

Product data and descriptions listed are typical values, not intended to be used as specification.

ALD Material

Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.

Tetraiodosilane; Silicon tetraiodide; Silicon iodide
  • ?Hform: -189.5 kJ/mol
  • ?Hfus: -29 kJ/mol
  • UV absorption max: 284 nm
  • May be reduced to silicon metal
  • Reacts with NH3 <500 °C to form SiN
  • Can be ignited in air forming SiO2
  • EINECS Number: 236-706-2

    Specific Gravity: 4.198

    HMIS Key: 3-2-2-X

    Hydrolytic Sensitivity: 8: reacts rapidly with moisture, water, protic solvents

    Formula: I4Si


    Application: May be reduced to silicon metal.1
    Reacts with NH3 <500° to form SiN.2

    Reference: 1. Szekely,G. J. Electrochem. Soc. 1957, 104, 663.
    2. Kaloyeros, A. et al. Chemical Aspects of Electronic Ceramic Processing MRS Proc 1998, 495.

    Additional Properties: ?Hfus: -7 kcal/mole
    ?Hform: -189.5 kJ/mole