Pack Size
Quantity
Price
 
10 g
$87.00

Product data and descriptions listed are typical values, not intended to be used as specification.

  • Einecs Number

    232-182-4
  • Synonyms

    SILICON TETRABROMIDE
  • HMIS

    3-1-2-X
  • Molecular Formula

    Br4Si
  • Molecular Weight (g/mol)

    347.70
  • TSCA

    Yes
  • Delta H Vaporization (kJ/mol)

    9.05 kcal/mole
  • Boiling Point (˚C/mmHg)

    154
  • Density (g/mL)

    2.772
  • Density Temperature (˚C)

    25
  • Melting Point (˚C)

  • Refractive Index @ 20˚C

    1.5627

Additional Properties

  • Hydrolytic Sensitivity

    8: reacts rapidly with moisture, water, protic solvents
  • Surface Tension (mN/m)

    16.9
  • Safety

  • Packaging Under

    Nitrogen
  • Silicon Chemistry, Applied Technology

    Silicon Nitride and Silicon Nitride-Rich Thin Film Technologies: Trends in Deposition Techniques and Related Applications – Kaloyeros, Jove, Goff, & Arkles

    This article provides an overview of the state-of-the-art chemistry and processing technologies for silicon nitride and silicon nitride- rich films, i.e., silicon nitride with C inclusion, both in hydrogenated (SiNx:H and SiNx:H(C)) and non-hydrogenated (SiNx and SiNx(C)) forms. The emphasis is on emerging trends and innovations in these SiNx material system technologies, with focus on Si and N source chemistries and thin film growth processes, including their primary effects on resulting film properties. It also illustrates that SiNx and its SiNx(C) derivative are the focus of an ever-growing research and manufacturing interest and that their potential usages are expanding into new technological areas.