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- Einecs Number 232-182-4
- Synonyms SILICON TETRABROMIDE
- HMIS 3-1-2-X
- Molecular Formula Br4Si
- Molecular Weight (g/mol) 347.70
- TSCA Yes
- Delta H Vaporization (kJ/mol) 9.05 kcal/mole
- Boiling Point (˚C/mmHg) 154°
- Density (g/mL) 2.772
- Density Temperature (˚C) 25
- Melting Point (˚C) 5°
- Refractive Index @ 20˚C 1.5627
This article provides an overview of the state-of-the-art chemistry and processing technologies for silicon nitride and silicon nitride- rich films, i.e., silicon nitride with C inclusion, both in hydrogenated (SiNx:H and SiNx:H(C)) and non-hydrogenated (SiNx and SiNx(C)) forms. The emphasis is on emerging trends and innovations in these SiNx material system technologies, with focus on Si and N source chemistries and thin film growth processes, including their primary effects on resulting film properties. It also illustrates that SiNx and its SiNx(C) derivative are the focus of an ever-growing research and manufacturing interest and that their potential usages are expanding into new technological areas.