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Product Code: SID3520.0

Cas No: 13760-02-6

10 g

Product data and descriptions listed are typical values, not intended to be used as specification.

ALD Material

Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.

Diiodosilane; Silicon diiodide
  • ?Hvap: 33.7 kJ/mol
  • Surface tension, 15 °: 44.1 mN/m
  • Cleaves ethers; converts alcohols to iodides
  • Reagent for conversion of carbamates to ureas via isocyanates
  • Specific Gravity: 2.834

    Flashpoint: 38°C (100°F)

    HMIS Key: 3-2-2-X

    Hydrolytic Sensitivity: 9: reacts extremely rapidly with atmospheric moisture - may be pyrophoric - glove box or sealed system required

    Formula: H2I2Si

    Purity: 0.99

    Application: Cleaves ethers; converts alcohols to iodides.1
    Reagent for conversion of carbamates to ureas via isocyanates.2

    Reference: 1. Keinan, E. et al. J. Org. Chem. 1987, 52, 4846.
    2. Gastaldi, S. et al. J. Org. Chem. 2000, 65, 3239.


    Additional Properties: Surface tension, 15°: 44.1 mN/m
    ?Hvap: 8.05 kcal/mole