METHYLSILANE

Product Code: SIM6515.0
CAS No: 992-94-9
SDS Sheets: EU | US
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992-94-9
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Price
 
50 g
$1,026.00

Prices listed are EXW price (Morrisville, PA US) in USD. Prices vary depending on currency and Incoterms.

Product data and descriptions listed are typical values, not intended to be used as specification.

  • Einecs Number

    213-598-5
  • Synonyms

    1MS
  • HMIS

    3-4-3-X
  • Molecular Formula

    CH6Si
  • Molecular Weight (g/mol)

    46.14
  • TSCA

    Yes
  • Delta H Vaporization (kJ/mol)

    4.6 kcal/mole
  • Autoignition Temp (˚C)

    130
  • Boiling Point (˚C/mmHg)

    -57
  • Density (g/mL)

    0.628
  • Density Temperature (˚C)

    -58
  • Melting Point (˚C)

    -157°

Additional Properties

  • Hydrolytic Sensitivity

    9: reacts extremely rapidly with atmospheric moisture - may be pyrophoric - glove box or sealed system required

    • Application

    Plasma polymerization yields dry process photoresist.1
    Intermediate for poly(methylsilane) precursor to silicon carbide.2
    Deposits SiC on Si and Ge at 400 - 500?C.3
    Source for hydrogenated amorphous silicon carbide films.4

    Reference

    1. Dabbagh, G. et al. J. Photopolym. Sci. Tech. 1998, 11, 651.
    2. Fhang, Z. et al. J. Am. Ceram. Soc. 1991, 74, 670.
    3. Takatsuka, T. et al. Appl. Surf. Sci. 2000, 162, 156.
    4. Lee, M. et al. in “Chemical Aspects of Electronic Ceramics Processing” Arkles, B. ed., MRS Proc. 1998, 495, 153.

    Safety

  • Packaging Under

    Nitrogen

    • Volatile Carbosilane

    Carbosilanes are compounds in which the elements of silicon and carbon alternate in a molecular framework or polymeric backbone in an approximate ratio of 1:1. By appropriate selection of the carbosilane precursor and deposition conditions the silicon carbide framework can be shifted toward substituted silicon and diamond-like structures.

    Methylsilane; 1MS; Silylmethane; Monomethylsilane; Monosilylmethane

  • CAUTION: CAN FORM EXPLOSIVE MIXTURES WITH AIR

  • ΔHcomb: -2,612 kJ/mol
  • ΔHform: -29 kJ/mol
  • ΔHvap: 19.3 kJ/mol
  • Dipole moment: 0.73 debye
  • Vapor pressure, -80 °C: 241 mm
  • Vapor pressure, 21 °C: 14 atm (210 psia)
  • Critical temperature: 79.3 °C
  • Plasma polymerization yields dry process photoresist
  • Intermediate for poly(methylsilane) precursor to silicon carbide
  • Deposits SiC on Si and Ge at 400 - 500 °C
  • Source for hydrogenated amorphous silicon carbide films

    • Silicon Chemistry, Applied Technology, Metal-Organic Chemistry, Applied Chemistry & Physics

    Low Temperature Inorganic CVD of Ti-Si-N Diffusion Barrier Liners for Gigascale Copper Interconnect Applications – Eisenbraun et al.

    Silicon Chemistry, Applied Technology

    Silicon Nitride Films by Atmospheric Pressure CVD

    Silicon Chemistry, Applied Technology, Metal-Organic Chemistry, Applied Chemistry & Physics

    Synthesizing Low-k CVD Materials for Fab Use – Arkles et al.

    Silicon Chemistry, Applied Technology

    Understanding ALD MLD and SAMs as they enter the fab – Arkles, Goff, & Kaloyeros