ISOTETRASILANE

Product Code: SII6463.4
CAS No: 13597-87-0
SDS Sheets: EU | US
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5 g
$2,970.00

Prices listed are EXW price (Morrisville, PA US) in USD. Prices vary depending on currency and Incoterms.

Product data and descriptions listed are typical values, not intended to be used as specification.

  • Synonyms

    (TRISILYL)SLANE
  • HMIS

    3-4-3-X
  • Molecular Formula

    H10Si4
  • Molecular Weight (g/mol)

    122.42
  • Purity (%)

    98%
  • TSCA

    No
  • Delta H Vaporization (kJ/mol)

    32.5 kJ/mole
  • Boiling Point (˚C/mmHg)

    101
  • Density (g/mL)

    0.793
  • Melting Point (˚C)

    -99°
  • Refractive Index @ 20˚C

    1.5449

Additional Properties

  • Hydrolytic Sensitivity

    10: reacts extremely rapidly with moisture and oxygen - may be pyrophoric - sealed system required

    • Application

    Precursor for low temp. epitaxy of doped crystalline silicon.1,2
    Employed in low temperature CVD of amorphous silicon.2

    Reference

    1. Francis, T. et al. US Pat. Appl. 20120003819, 2012.
    2. Kanoh, H. et al. Jpn. J. Appl. Phys. 1993, 32, 2613.

    Safety

  • Packaging Under

    Nitrogen

    • Volatile Higher Silane

    Volatile higher silanes are low temperature, high deposition rate precursors. By appropriate selection of precursor and deposition conditions, silicon deposition can be shifted from amorphous hydrogenated silicon toward microcrystalline silicon structures. As the number of silicon atoms increases beyond two, electrons are capable of sigma–sigma bond conjugation. The dissociative adsorption of two of the three hydrogen atoms on terminal silicon atoms has a lower energy barrier.

    Isotetrasilane; (Trisilyl)silane; 2-Silyltrisilane

  • PYROPHORIC

  • AIR TRANSPORT FORBIDDEN

  • ?Hvap: 32.5 kJ/mol
  • Precursor for low temp. epitaxy of doped crystalline silicon
  • Employed in low temperature CVD of amorphous silicon

    • Silicon Chemistry, Applied Technology, Metal-Organic Chemistry, Applied Chemistry & Physics

    Low Temperature Inorganic CVD of Ti-Si-N Diffusion Barrier Liners for Gigascale Copper Interconnect Applications – Eisenbraun et al.

    Silicon Chemistry, Applied Technology

    Silicon Nitride Films by Atmospheric Pressure CVD

    Silicon Chemistry, Applied Technology

    Silicon Nitride and Silicon Nitride-Rich Thin Film Technologies: Trends in Deposition Techniques and Related Applications – Kaloyeros, Jove, Goff, & Arkles

    This article provides an overview of the state-of-the-art chemistry and processing technologies for silicon nitride and silicon nitride- rich films, i.e., silicon nitride with C inclusion, both in hydrogenated (SiNx:H and SiNx:H(C)) and non-hydrogenated (SiNx and SiNx(C)) forms. The emphasis is on emerging trends and innovations in these SiNx material system technologies, with focus on Si and N source chemistries and thin film growth processes, including their primary effects on resulting film properties. It also illustrates that SiNx and its SiNx(C) derivative are the focus of an ever-growing research and manufacturing interest and that their potential usages are expanding into new technological areas.

    Silicon Chemistry, Applied Technology

    Synthesis and Exploratory Deposition Studies of Isotetrasilane and Reactive Intermediates for Epitaxial Silicon – Arkles et al.

    Silicon Chemistry, Applied Technology, Metal-Organic Chemistry, Applied Chemistry & Physics

    Synthesizing Low-k CVD Materials for Fab Use – Arkles et al.