DICHLOROSILANE

Organosilanes are hydrocarbon-like and possess the ability to serve as both ionic and free-radical reducing agents. These reagents and their reaction by-products are safer and more easily handled and disposed than many other reducing agents. The metallic nature of silicon and its low electronegativity relative to hydrogen lead to polarization of the Si-H bond yielding a hydridic hydrogen and a milder reducing agent compared to aluminum-, boron-, and other metal-based hydrides. A summary of some key silane reductions are presented in Table 1 of the Silicon-Based Reducing Agents brochure.

Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.

CAUTION: CAN FORM PYROPHORIC REACTION PRODUCTS ON CONTACT WITH WATER OR AMINES

AIR TRANSPORT FORBIDDEN

Vapor pressure, -34 °C: 100 mm

Vapor pressure, 20 °C: 1.62 atm (23.8 psia)

ΔH_form: -314 kJ/mol

ΔH_vap: 27.2 kJ/mol

Dipole moment: 1.17 debye

Specific heat: 1.122 J/g/°C

Critical temperature: 176 °C

Critical pressure: 46.1 atm

For epitaxial deposition

Undergoes hydrosilylation reactions

Gives improved yields in reduction of imines over that of trichlorosilane

Available as a solution in xylene, SID3368.6

Extensive review of silicon based reducing agents: Larson, G.; Fry, J. L. "Ionic and Organometallic-Catalyzed Organosilane Reductions", Wipf, P., Ed.; Wiley, 2007