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Dialkyl Silane Reducing Agent
Organosilanes are hydrocarbon-like and possess the ability to serve as both ionic and free-radical reducing agents. These reagents and their reaction by-products are safer and more easily handled and disposed than many other reducing agents. The metallic nature of silicon and its low electronegativity relative to hydrogen lead to polarization of the Si-H bond yielding a hydridic hydrogen and a milder reducing agent compared to aluminum-, boron-, and other metal-based hydrides. A summary of some key silane reductions are presented in Table 1 of the Silicon-Based Reducing Agents brochure.
Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.
Dichlorosilane; Silicomethylene chloride; Dihydridodichlorosilane
CAUTION: CAN FORM PYROPHORIC REACTION PRODUCTS ON CONTACT WITH WATER OR AMINES
AIR TRANSPORT FORBIDDEN
Boiling Point: 8.3°
EINECS Number: 223-888-3
Melting Point: -122°
Molecular Weight: 101.01
Alternative Name: DCS
Specific Gravity: 1.22
Flashpoint: -37°C (-35°F)
HMIS Key: 4-4-3-X
Hydrolytic Sensitivity: 9: reacts extremely rapidly with atmospheric moisture - may be pyrophoric - glove box or sealed system required
Additional Properties: 57.8Dipole moment: 1.17 debye?Hform: -75 kcal/moleCritical temperature: 176°Critical pressure: 46.1 atm?Hvap: 6.5 kcal/moleSpecific heat: 0.268 cal/g°For epitaxial depositionVapor pressure, -34°: 100 mmVapor pressure, 20°: 1.62 atm (23.8 psia)