COMMERCIAL
2370-88-9

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1,3,5,7-TETRAMETHYLCYCLOTETRASILOXANE

Product Code: SIT7530.0

Cas No: 2370-88-9

R&D quantities:

100 g
$130.00
25 g
$41.00
3 kg
$1,185.00

Interested in a Commercial Order?

Siloxane-Based Silane Reducing Agent

Organosilanes are hydrocarbon-like and possess the ability to serve as both ionic and free-radical reducing agents. These reagents and their reaction by-products are safer and more easily handled and disposed than many other reducing agents. The metallic nature of silicon and its low electronegativity relative to hydrogen lead to polarization of the Si-H bond yielding a hydridic hydrogen and a milder reducing agent compared to aluminum-, boron-, and other metal-based hydrides. A summary of some key silane reductions are presented in Table 1 of the Silicon-Based Reducing Agents brochure.

1,3,5,7-Tetramethylcyclotetrasiloxane; TMCTS; Methyl hydrogen cyclic tetramer
  • ΔHcomb: 5,308 kJ/mol
  • ΔHvap: 177.9 kJ/mol
  • Vapor pressure, 20 °C: 7.0 mm
  • Critical temperature: 278 °C
  • High molecular weight silane reducing agent
  • In presence of oxygen plasma generates SiO2 films for microelectronics
  • Cyclic monomer- undergoes hydrosilylation reactions
  • Forms hybrid inorganic-organic polymers with dienes suitable for circuit board resins
  • Forms gate dielectrics by CVD
  • Extensive review of silicon based reducing agents: Larson, G.; Fry, J. L. "Ionic and Organometallic-Catalyzed Organosilane Reductions", Wipf, P., Ed.; Wiley, 2007
  • Boiling Point: 134-5°

    EINECS Number: 219-137-4

    Melting Point: -69°

    Molecular Weight: 240.51

    Alternative Name: D'4; TMCTS

    Specific Gravity: 0.9912

    Flashpoint: 31°C (88°F)

    HMIS Key: 2-3-1-X

    Hydrolytic Sensitivity: 3: reacts with aqueous base

    Formula: C4H16O4Si4

    Refractive Index: 1.3870

    TSCA: TSCA

    Application: Cyclic monomer- undergoes hydrosilylation reactions.1
    Forms hybrid inorganic-organic polymers with dienes suitable for circuit board resins.2
    Forms gate dielectrics by CVD.3

    Reference: 1. Michalczyk, M. et al. Chem. Mater. 1993, 5, 1687.
    2. Leibfried, R. U.S. Patent 4,900,799, 1990.
    3. Wang, A. et al. Res. Soc. Symp. Proc. 1997, 424, 281.

    Additional Properties: 270
    ?Hcomb: 1,268 kcal/mole
    Critical temperature: 278°
    ?Hvap: 42.5 kcal/mole
    In presence of oxygen plasma generates SiO2 films for microelectronics
    Vapor pressure, 20°: 7.0 mm