Gelest, Inc. offers a range of metal-organic precursors for metallization applications in microelectronic applications. Precursors are available for commonly employed metals, such as silicon, copper, aluminum, titanium, tantalum and tungsten. These precursors are volatile solids or liquids and can be used to deposit metal thin films in typical CVD or ALD processes. Typical applications are for metal interconnects or diffusion barriers, for example. In addition, Gelest offers a wide range of other precursors for metallizaton of other elements.

Silanes

SIT7123.0

TETRAIODOSILANE

Metal-Organics

AKC252.8

COPPER(I)/(II) HEXAFLUORO-2,4-PENTANEDIONATE - VINYLTRIMETHYLSILANE COMPLEX

OMAL008

ALANE-TRIMETHYLAMINE COMPLEX

INTI071

TITANIUM TETRAIODIDE (99.9% on metals basis)

INTA070

TANTALUM PENTABROMIDE

INTU030

TUNGSTEN HEXACARBONYL

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