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Product Code: AKC252.8

Cas No: 139566-53-3/14781-45-4

50 g
10 g
ALD Material

Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.

Copper(I)/(I) hexafluoro-2,4-pentanedionate-vinyltrimethylsilane complex; Copper HFAC VTMS
  • 10-20% Copper(II)
  • High deposition rate, stable, optimized precursor for copper
  • Specific Gravity: 1.49

    Flashpoint: 72°C (162°F)

    HMIS Key: 3-2-1-X

    Hydrolytic Sensitivity: 7: reacts slowly with moisture/water

    Formula: C10H13CuF6O2Si

    Purity: 10-20% Copper (II)

    Application: High deposition rate, stable, optimized precursor for copper.1,2,3

    Reference: 1. Kaloyeros, A. et al. U.S. Patent 6,037,001, 2000.
    2. Burke, A. et al. J. Appl. Phys. 1997, 82, 4651.
    3. Braeckelmann, G. et al. J. Vac. Sci. Technol. B 1996, 14, 1828.

    Additional Properties: 340
    10 - 20% Copper(ll)