To search by structure, left click in the box below to display the chemdraw toolbar. Then, draw the chemical structure of interest in the box using the toolbar. When your structure is complete, click “Search by Name” or “Search by SMILES” to generate the product name or SMILES respectively. This feature will search within the Gelest product database for matching chemical names or SMILES. Note: In cases where Gelest uses alternate chemical names, it may be necessary to search for the product of interest by its CAS#.
All structures are computer generated. Please rely on the product data below for placing your order. If you see any errors in structures, please email customer service so that they can be addressed.
COPPER(I)/(II) HEXAFLUORO-2,4-PENTANEDIONATE – VINYLTRIMETHYLSILANE COMPLEX
Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.
Copper(I)/(I) hexafluoro-2,4-pentanedionate-vinyltrimethylsilane complex; Copper HFAC VTMS
Boiling Point: 50° / 50
Melting Point: -5°
Molecular Weight: 370.84
Specific Gravity: 1.49
Flashpoint: 72°C (162°F)
HMIS Key: 3-2-1-X
Hydrolytic Sensitivity: 7: reacts slowly with moisture/water
Purity: 10-20% Copper (II)
Application: High deposition rate, stable, optimized precursor for copper.1,2,3
Reference: 1. Kaloyeros, A. et al. U.S. Patent 6,037,001, 2000.
2. Burke, A. et al. J. Appl. Phys. 1997, 82, 4651.
3. Braeckelmann, G. et al. J. Vac. Sci. Technol. B 1996, 14, 1828.
Additional Properties: 34010 - 20% Copper(ll)