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Product Code: SIT8714.0

Cas No: 15112-89-7

50 g
10 g
15 kg
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2 kg
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Product data and descriptions listed are typical values, not intended to be used as specification.

ALD Material

Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.

Tris(dimethylamino)silane; Tris(dimethylamido)silylhydride; N,N,N',N',N'',N''-Hexamethylsilanetriamine

  • Vapor pressure, 4 °C: 1 6 mm
  • Hydrosilylates olefins in presence of Rh2Cl2(CO)4
  • Reacts with ammonia to form silicon nitride prepolymers
  • Employed in low pressure CVD of silicon nitride
  • EINECS Number: 239-165-0

    Alternative Name: 3DMAS

    Specific Gravity: 0.838

    Flashpoint: 25°C (77°F)

    HMIS Key: 4-3-2-X

    Hydrolytic Sensitivity: 8: reacts rapidly with moisture, water, protic solvents

    Formula: C6H19N3Si


    Refractive Index: 1.4247

    Application: Hydrosilylates olefins in presence of Rh2Cl2(CO)41; reacts with ammonia to form silicon nitride prepolymers.1
    Employed in low pressure CVD of silicon nitride.2

    Reference: 1. Review: Kanner, B. et al. In Silicon Chemistry; Corey, J. et al. Ed.; Wiley, 1988; p.123.
    2. Levy, R. et al. J. Mater. Res. 1996, 11, 1483.

    Additional Properties: Alumina and alkali source in the manufacture of glass and ceramics