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Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.
Tris(dimethylamino)silane; Tris(dimethylamido)silylhydride; N,N,N',N',N'',N''-Hexamethylsilanetriamine
AIR TRANSPORT FORBIDDEN
EINECS Number: 239-165-0
Alternative Name: 3DMAS
Specific Gravity: 0.838
Flashpoint: 25°C (77°F)
HMIS Key: 4-3-2-X
Hydrolytic Sensitivity: 8: reacts rapidly with moisture, water, protic solvents
Refractive Index: 1.4247
Application: Hydrosilylates olefins in presence of Rh2Cl2(CO)41; reacts with ammonia to form silicon nitride prepolymers.1
Employed in low pressure CVD of silicon nitride.2
Reference: 1. Review: Kanner, B. et al. In Silicon Chemistry; Corey, J. et al. Ed.; Wiley, 1988; p.123.
2. Levy, R. et al. J. Mater. Res. 1996, 11, 1483.
Additional Properties: Alumina and alkali source in the manufacture of glass and ceramics