Pack Size
Quantity
Price
 
5 g
$798.00

Product data and descriptions listed are typical values, not intended to be used as specification.

  • HMIS

    3-4-3-X
  • Molecular Formula

    H8Si3
  • Molecular Weight (g/mol)

    92.32
  • TSCA

    Yes (L)
    Low Volume Exemption
  • Delta H Vaporization (kJ/mol)

    6.666 kcal/mole
  • Boiling Point (˚C/mmHg)

    52.9
  • Density (g/mL)

    0.7430
  • Melting Point (˚C)

    -117°
  • Refractive Index @ 20˚C

    1.4978

Additional Properties

  • Hydrolytic Sensitivity

    10: reacts extremely rapidly with moisture and oxygen - may be pyrophoric - sealed system required
  • Application

    Employed in low-temperature CVD of silicon and silicon alloys.1,2
    Forms silicon nanowires initiated by gold seeds.3

    Reference

    1. Akhtar, M. et al. MRS Proc. 1986, 70.
    2. Todd, M. et al. U.S. Patent 6,821,825, 2004.
    3. Heitsch, A. et al. J. Am. Chem. Soc. 2008, 130, 5436.

    Safety

  • Packaging Under

    Nitrogen
  • Volatile Higher Silane

    Volatile higher silanes are low temperature, high deposition rate precursors. By appropriate selection of precursor and deposition conditions, silicon deposition can be shifted from amorphous hydrogenated silicon toward microcrystalline silicon structures. As the number of silicon atoms increases beyond two, electrons are capable of sigma–sigma bond conjugation. The dissociative adsorption of two of the three hydrogen atoms on terminal silicon atoms has a lower energy barrier.

    ALD Material

    Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.

    Trisilane; Trisilicane; Silicopropane; Silicon hydride; Trisilicon octahydride

  • PYROPHORIC

  • ?Hform: 121 kJ/mol
  • ?Hvap: 27.9 kJ/mol
  • Bond dissociation energy (Si–Si): 313 kJ/mol
  • Vapor pressure, 0 °C: 95.5 mm
  • Employed in low-temperature CVD of silicon and silicon alloys
  • Forms silicon nanowires initiated by gold seeds
  • Silicon Chemistry, Applied Technology, Metal-Organic Chemistry, Applied Chemistry & Physics

    Silicon Chemistry, Applied Technology

    Silicon Chemistry, Applied Technology

    Silicon Nitride and Silicon Nitride-Rich Thin Film Technologies: Trends in Deposition Techniques and Related Applications – Kaloyeros, Jove, Goff, & Arkles

    This article provides an overview of the state-of-the-art chemistry and processing technologies for silicon nitride and silicon nitride- rich films, i.e., silicon nitride with C inclusion, both in hydrogenated (SiNx:H and SiNx:H(C)) and non-hydrogenated (SiNx and SiNx(C)) forms. The emphasis is on emerging trends and innovations in these SiNx material system technologies, with focus on Si and N source chemistries and thin film growth processes, including their primary effects on resulting film properties. It also illustrates that SiNx and its SiNx(C) derivative are the focus of an ever-growing research and manufacturing interest and that their potential usages are expanding into new technological areas.

    Silicon Chemistry, Applied Technology, Metal-Organic Chemistry, Applied Chemistry & Physics