7783-26-8

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TRISILANE

Product Code: SIT8709.6

Cas No: 7783-26-8

R&D quantities:

5 g
$798.00
Volatile Higher Silane

Volatile higher silanes are low temperature, high deposition rate precursors. By appropriate selection of precursor and deposition conditions, silicon deposition can be shifted from amorphous hydrogenated silicon toward microcrystalline silicon structures. As the number of silicon atoms increases beyond two, electrons are capable of sigma–sigma bond conjugation. The dissociative adsorption of two of the three hydrogen atoms on terminal silicon atoms has a lower energy barrier.

ALD Material

Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.

Trisilane; Trisilicane; Silicopropane; Silicon hydride; Trisilicon octahydride

  • PYROPHORIC

  • ?Hform: 121 kJ/mol
  • ?Hvap: 27.9 kJ/mol
  • Bond dissociation energy (Si–Si): 313 kJ/mol
  • Vapor pressure, 0 °C: 95.5 mm
  • Employed in low-temperature CVD of silicon and silicon alloys
  • Forms silicon nanowires initiated by gold seeds

    • Boiling Point: 52.9°

    Melting Point: -117°

    Molecular Weight: 92.32

    Specific Gravity: 0.7430

    HMIS Key: 3-4-3-X

    Hydrolytic Sensitivity: 10: reacts extremely rapidly with moisture and oxygen - may be pyrophoric - sealed system required

    Formula: H8Si3

    Refractive Index: 1.4978

    TSCA: TSCA-L

    Application: Employed in low-temperature CVD of silicon and silicon alloys.1,2
    Forms silicon nanowires initiated by gold seeds.3

    Reference: 1. Akhtar, M. et al. MRS Proc. 1986, 70.
    2. Todd, M. et al. U.S. Patent 6,821,825, 2004.
    3. Heitsch, A. et al. J. Am. Chem. Soc. 2008, 130, 5436.

    Additional Properties: ?Hform: 121 kJ/mole
    ?Hvap: 6.666 kcal/mole
    Bond dissociation energy (Si-Si): 313 kJ/mole
    Vapor pressure, 0°: 95.5 mm