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EINECS Number: 200-899-1
Alternative Name: TMS; 4MS
Specific Gravity: 0.641
Flashpoint: -27°C (-17°F)
HMIS Key: 1-4-0-X
Hydrolytic Sensitivity: 1: no significant reaction with aqueous systems
Refractive Index: 1.3588
Application: Employed in deposition of SI:C:O:H dielectric films.1
Reference: 1. Laxman, R. et al. Semiconductor International 2000, 23, 95.
Additional Properties: Photoionization threshold: 8.1 eVCe: 1.838 x 10-3?Hcomb: 920 kcal/mole185°?Hform: -55.4 kcal/mole33 atm?Hvap: 6.4 kcal/mole?Hfus: 1.6 kcal/moleNMR grade