Additional Properties
- Einecs Number 200-899-1
- Synonyms TMS; 4MS
- HMIS 1-4-0-X
- Molecular Formula C4H12Si
- Molecular Weight (g/mol) 88.22
- Purity (%) 99.90%
- TSCA Yes
- Delta H Vaporization (kJ/mol) 6.4 kcal/mole
- Boiling Point (˚C/mmHg) 26.6-26.7
- Density (g/mL) 0.641
- Flash Point (˚C) -27 °C
- Melting Point (˚C) -99°
- Refractive Index @ 20˚C 1.3588
- Viscosity at 25 ˚C (cSt) 0.4
Application
Employed in deposition of SI:C:O:H dielectric films.1
Reference
1. Laxman, R. et al. Semiconductor International 2000, 23, 95.
Safety