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Boiling Point: 26.6-26.7
EINECS Number: 200-899-1
Melting Point: -99°
Molecular Weight: 88.22
Alternative Name: TMS; 4MS
Specific Gravity: 0.641
Flashpoint: -27°C (-17°F)
HMIS Key: 1-4-0-X
Hydrolytic Sensitivity: 1: no significant reaction with aqueous systems
Refractive Index: 1.3588
Application: Intermediate for ?-SiC:H thin films by PECVD.1
Reference: 1. Kim, D. et al. Thin Solid Films 1996, 283, 109.
Additional Properties: 450Photoionization threshold: 8.1 eVCe: 1.838 x 10-3?Hcomb: 920 kcal/moleCritical temperature: 185°?Hform: -55.4 kcal/moleCritical pressure: 33 atm?Hvap: 6.4 kcal/moleHeat capacity: 195.2 joules/mole-K?Hfus: 1.6 kcal/moleDielectric constant: 1.92NMR gradeVapor pressure, 20°: 589 mm