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75-76-3

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TETRAMETHYLSILANE, 99+%

Product Code: SIT7555.0

Cas No: 75-76-3

R&D quantities:

100 g
$94.00
25 g
$27.00
Tetramethylsilane; 4MS; TMS
  • NMR grade
  • Viscosity: 0.4 cSt
  • ΔHcomb: 3,851 kJ/mol
  • ΔHform: -232 kJ/mol
  • ΔHvap: 26.8 kJ/mol
  • ΔHfus: 6.7 kJ/mol
  • Photoionization threshold: 8.1 eV
  • Ce: 1.838 x 10-3
  • Vapor pressure, 20 °C: 589 mm
  • Critical temperature: 185 °C
  • Critical pressure: 33 atm
  • Heat capacity: 195.2 Jmol-1K-1
  • Dielectric constant: 1.92
  • Intermediate for α-SiC:H thin films by PECVD
  • Boiling Point: 26.6-26.7

    EINECS Number: 200-899-1

    Melting Point: -99°

    Molecular Weight: 88.22

    Alternative Name: TMS; 4MS

    Specific Gravity: 0.641

    Flashpoint: -27°C (-17°F)

    HMIS Key: 1-4-0-X

    Hydrolytic Sensitivity: 1: no significant reaction with aqueous systems

    Formula: C4H12Si

    Purity: 99%

    Refractive Index: 1.3588

    TSCA: TSCA

    Application: Intermediate for ?-SiC:H thin films by PECVD.1

    Reference: 1. Kim, D. et al. Thin Solid Films 1996, 283, 109.

    Additional Properties: 450
    Photoionization threshold: 8.1 eV
    Ce: 1.838 x 10-3
    ?Hcomb: 920 kcal/mole
    Critical temperature: 185°
    ?Hform: -55.4 kcal/mole
    Critical pressure: 33 atm
    ?Hvap: 6.4 kcal/mole
    Heat capacity: 195.2 joules/mole-K
    ?Hfus: 1.6 kcal/mole
    Dielectric constant: 1.92
    NMR grade
    Vapor pressure, 20°: 589 mm