Pack Size
Quantity
Price
 
50 g
$798.00
5 kg
$2,405.00

Product data and descriptions listed are typical values, not intended to be used as specification.

  • Einecs Number

    233-054-0
  • Synonyms

    SILICON TETRACHLORIDE
  • HMIS

    3-0-2-X
  • Molecular Formula

    Cl4Sn
  • Molecular Weight (g/mol)

    169.90
  • Purity (%)

    100%
  • TSCA

    Yes
  • Boiling Point (˚C/mmHg)

    57.6°
  • Density (g/mL)

    1.481
  • Melting Point (˚C)

    -70°
  • Refractive Index @ 20˚C

    1.4153

Additional Properties

  • Hydrolytic Sensitivity

    8: reacts rapidly with moisture, water, protic solvents
  • Safety

  • Packaging Under

    Nitrogen
  • Silicon Chemistry, Applied Technology

    Silicon Nitride and Silicon Nitride-Rich Thin Film Technologies: Trends in Deposition Techniques and Related Applications – Kaloyeros, Jove, Goff, & Arkles

    This article provides an overview of the state-of-the-art chemistry and processing technologies for silicon nitride and silicon nitride- rich films, i.e., silicon nitride with C inclusion, both in hydrogenated (SiNx:H and SiNx:H(C)) and non-hydrogenated (SiNx and SiNx(C)) forms. The emphasis is on emerging trends and innovations in these SiNx material system technologies, with focus on Si and N source chemistries and thin film growth processes, including their primary effects on resulting film properties. It also illustrates that SiNx and its SiNx(C) derivative are the focus of an ever-growing research and manufacturing interest and that their potential usages are expanding into new technological areas.