10026-04-7

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TETRACHLOROSILANE, 98%

Product Code: SIT7085.0

Cas No: 10026-04-7

2.5 kg
$172.50
25 g
$26.00
ALD Material

Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.

Tetrachlorosilane; Silicon chloride; Silicon tetrachloride
  • Viscosity: 0.35 cSt
  • ΔHform: -640 kJ/mol
  • ΔHvap: 31.8 kJ/mol
  • ΔHfus: 45.2 J/g
  • Surface tension: 19.7 mN/m
  • Dielectric constant: 2.40
  • Vapor pressure, 20 °C: 194 mm
  • Critical pressure: 37.0 atm
  • Critical temperature: 234 °C
  • Coefficient of thermal expansion: 1.1 x 10-3
  • Specific heat: 0.84 J/g/°
  • Reaction with living alkali metal terminated polymers results in star polymers
  • Primary industrial use - combustion with hydrogen and air to give fumed silica
  • Enantioselectively opens stilbine epoxides to trichlorosilylated chlorohydrins
  • Promotes the reaction of aldehydes with isocyanides
  • EINECS Number: 233-054-0

    Alternative Name: SILICON TETRACHLORIDE

    Specific Gravity: 1.481

    HMIS Key: 3-0-2-X

    Hydrolytic Sensitivity: 8: reacts rapidly with moisture, water, protic solvents

    Formula: Cl4Si

    Purity: 98%

    TSCA: TSCA

    Refractive Index: 1.4153

    Application: Enantioselectively opens stilbine epoxides to trichlorosilylated chlorohydrins.1
    Promotes the reaction of aldehydes with isocyanides.2

    Reference: 1. Tao, B. et al. J. Am. Chem. Soc. 2001, 123, 353.
    2. Denmark, S. E.; Fan, Y. J. Am. Chem. Soc. 2003, 125, 7825.

    Fieser:

    Additional Properties: Dielectric constant: 2.40
    Surface tension: 19.7 mN/m
    ?Hform: -153 kcal/mole
    234°
    ?Hfus: 10.8 cal/g
    37.0 atm
    ?Hvap: 7.6 kcal/mole
    Specific heat: 0.20 cal/g/°
    Coefficient of thermal expansion: 1.1 x 10-3
    Reaction with living alkali metal terminated polymers results in star polymers