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Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.
Tetrachlorosilane; Silicon chloride; Silicon tetrachloride
EINECS Number: 233-054-0
Alternative Name: SILICON TETRACHLORIDE
Specific Gravity: 1.481
HMIS Key: 3-0-2-X
Hydrolytic Sensitivity: 8: reacts rapidly with moisture, water, protic solvents
Refractive Index: 1.4153
Application: Enantioselectively opens stilbine epoxides to trichlorosilylated chlorohydrins.1
Promotes the reaction of aldehydes with isocyanides.2
Reference: 1. Tao, B. et al. J. Am. Chem. Soc. 2001, 123, 353.
2. Denmark, S. E.; Fan, Y. J. Am. Chem. Soc. 2003, 125, 7825.
Additional Properties: Dielectric constant: 2.40Surface tension: 19.7 mN/m?Hform: -153 kcal/mole234°?Hfus: 10.8 cal/g37.0 atm?Hvap: 7.6 kcal/moleSpecific heat: 0.20 cal/g/°Coefficient of thermal expansion: 1.1 x 10-3Reaction with living alkali metal terminated polymers results in star polymers