Pack Size
Quantity
Price
 
10 g
$1,354.00

Product data and descriptions listed are typical values, not intended to be used as specification.

  • Einecs Number

    236-705-7
  • Synonyms

    MONOCHLOROSILANE
  • HMIS

    4-4-3-X
  • Molecular Formula

    H3ClSi
  • Molecular Weight (g/mol)

    66.56
  • Purity (%)

    95%
  • TSCA

    Yes
  • Delta H Vaporization (kJ/mol)

    21 kJ/mole
  • Boiling Point (˚C/mmHg)

    -30.4
  • Density (g/mL)

    1.145
  • Density Temperature (˚C)

    -113
  • Flash Point (˚C)

    -90 °C
  • Melting Point (˚C)

    -118°

Additional Properties

  • Hydrolytic Sensitivity

    10: reacts extremely rapidly with moisture and oxygen - may be pyrophoric - sealed system required
  • Safety

  • Hazard Info

    ihl rat, LC50: 4,257 ppm/1H
  • Packaging Under

    Nitrogen
  • Store Cold
  • Silicon Chemistry, Applied Technology

    Silicon Nitride and Silicon Nitride-Rich Thin Film Technologies: Trends in Deposition Techniques and Related Applications – Kaloyeros, Jove, Goff, & Arkles

    This article provides an overview of the state-of-the-art chemistry and processing technologies for silicon nitride and silicon nitride- rich films, i.e., silicon nitride with C inclusion, both in hydrogenated (SiNx:H and SiNx:H(C)) and non-hydrogenated (SiNx and SiNx(C)) forms. The emphasis is on emerging trends and innovations in these SiNx material system technologies, with focus on Si and N source chemistries and thin film growth processes, including their primary effects on resulting film properties. It also illustrates that SiNx and its SiNx(C) derivative are the focus of an ever-growing research and manufacturing interest and that their potential usages are expanding into new technological areas.