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- Einecs Number 236-705-7
- Synonyms MONOCHLOROSILANE
- HMIS 4-4-3-X
- Molecular Formula H3ClSi
- Molecular Weight (g/mol) 66.56
- Purity (%) 95%
- TSCA Yes
- Delta H Vaporization (kJ/mol) 21 kJ/mole
- Boiling Point (˚C/mmHg) -30.4°
- Density (g/mL) 1.145
- Density Temperature (˚C) -113
- Flash Point (˚C) -90 °C
- Melting Point (˚C) -118°
Silicon Chemistry, Applied Technology
This article provides an overview of the state-of-the-art chemistry and processing technologies for silicon nitride and silicon nitride- rich films, i.e., silicon nitride with C inclusion, both in hydrogenated (SiNx:H and SiNx:H(C)) and non-hydrogenated (SiNx and SiNx(C)) forms. The emphasis is on emerging trends and innovations in these SiNx material system technologies, with focus on Si and N source chemistries and thin film growth processes, including their primary effects on resulting film properties. It also illustrates that SiNx and its SiNx(C) derivative are the focus of an ever-growing research and manufacturing interest and that their potential usages are expanding into new technological areas.