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10 g
$125.00
100 g
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Product data and descriptions listed are typical values, not intended to be used as specification.

  • Synonyms

    BDEAS
  • HMIS

    4-2-1-X
  • Molecular Formula

    C8H22N2Si
  • Molecular Weight (g/mol)

    174.16
  • Boiling Point (˚C/mmHg)

    70° / 30
  • Density (g/mL)

    0.804

Additional Properties

  • Hydrolytic Sensitivity

    8: reacts rapidly with moisture, water, protic solvents
  • Application

    ALD precursor for HfSiOx dielectric films.1

    Reference

    1. Katamreddy, R. et al. J. Electrochem. Soc. 2008, 155, G163.

    Safety

  • Packaging Under

    Nitrogen
  • Silicon Chemistry, Applied Technology

    Silicon Nitride and Silicon Nitride-Rich Thin Film Technologies: Trends in Deposition Techniques and Related Applications – Kaloyeros, Jove, Goff, & Arkles

    This article provides an overview of the state-of-the-art chemistry and processing technologies for silicon nitride and silicon nitride- rich films, i.e., silicon nitride with C inclusion, both in hydrogenated (SiNx:H and SiNx:H(C)) and non-hydrogenated (SiNx and SiNx(C)) forms. The emphasis is on emerging trends and innovations in these SiNx material system technologies, with focus on Si and N source chemistries and thin film growth processes, including their primary effects on resulting film properties. It also illustrates that SiNx and its SiNx(C) derivative are the focus of an ever-growing research and manufacturing interest and that their potential usages are expanding into new technological areas.