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- Synonyms BDEAS
- HMIS 4-2-1-X
- Molecular Formula C8H22N2Si
- Molecular Weight (g/mol) 174.16
- TSCA No
- Boiling Point (˚C/mmHg) 70/30
- Density (g/mL) 0.804
ALD precursor for HfSiOx dielectric films.1
1. Katamreddy, R. et al. J. Electrochem. Soc. 2008, 155, G163.
Silicon Chemistry, Applied Technology
This article provides an overview of the state-of-the-art chemistry and processing technologies for silicon nitride and silicon nitride- rich films, i.e., silicon nitride with C inclusion, both in hydrogenated (SiNx:H and SiNx:H(C)) and non-hydrogenated (SiNx and SiNx(C)) forms. The emphasis is on emerging trends and innovations in these SiNx material system technologies, with focus on Si and N source chemistries and thin film growth processes, including their primary effects on resulting film properties. It also illustrates that SiNx and its SiNx(C) derivative are the focus of an ever-growing research and manufacturing interest and that their potential usages are expanding into new technological areas.