COBALT TRICARBONYL NITROSYL

Product Code: INCO032
CAS No: 14096-82-3
SDS Sheets: EU | US
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14096-82-3
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10 g
$506.00

Prices listed are EXW price (Morrisville, PA US) in USD. Prices vary depending on currency and Incoterms.

Product data and descriptions listed are typical values, not intended to be used as specification.

  • Einecs Number

    237-945-5
  • HMIS

    4-2-1-X
  • Molecular Formula

    C3CoNO4
  • Molecular Weight (g/mol)

    172.97
  • TSCA

    No
  • Boiling Point (˚C/mmHg)

    50
  • Density (g/mL)

    1.47
  • Melting Point (˚C)

    -1.1°

Additional Properties

  • Hydrolytic Sensitivity

    7: reacts slowly with moisture/water

    • Application

    Employed in CVD of cobalt, cobalt silicide.1
    Hydrosilylation catalyst for carbonyls.2
    In combination with Fe(CO)5 forms spherical Fe/Co particles.3
    Reagent for mediated epitaxy of cobalt.4

    Reference

    1. Ivanova, A. et al. J. Electrochem. Soc. 1999, 146, 2139.
    2. Chatani, N. et al. Chem. Lett. 2000, 14.
    3. Morita, H. et al. J. Photochem. Photobiol., A 2009, 206, 205.
    4. Kaloyeros, A. et al. U.S. Patent 6,346,477, 2001.

    Safety

  • Packaging Under

    Nitrogen

    • ALD Material

    Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.

    Cobalt tricarbonyl nitrosyl; Dicobalt octacarbonyl

  • Red-brown liquid
  • Ionization energy: 8.3 eV
  • Vapor pressure, 20 °C" 100 mm
  • Specific gravity: 1.47
  • In combination with SiH4 forms CoSi by CVD
  • Catalyst for conversion of olefins, alkynes and CO to cyclopentenones
  • Reagent for mediated epitaxy cobalt
  • Deposition of cobalt for magnetic thin films
  • In combination with Fe(CO)5 forms spherical Fe/Co particles
  • Forming electrical contacts on transistor source/drain and gate regions
  • Optimize processing Co epitaxy growth in integrated silicide circuits

    • Metal-Organic Chemistry, Applied Chemistry & Physics

    Effects of Processing Parameters in the CVD of Cobalt from Cobalt Tricarbonyl Nitrosyl – Ivanova et al.

    Metal-Organic Chemistry, Applied Chemistry & Physics

    Interlayer Mediated Epitaxy of Cobalt Silicide on Silicon (100) from Low Temp CVD of Cobalt – Londergan et al.

    Metal-Organic Chemistry

    Review—Cobalt Thin Films: Trends in Processing Technologies and Emerging Applications

    Cobalt metallic films are the subject of an ever-expanding academic and industrial interest for incorporation into a multitude of new technological applications. This report reviews the state-of-the art chemistry and deposition techniques for cobalt thin films, highlighting innovations in cobalt metal-organic chemical vapor deposition (MOCVD), plasma and thermal atomic layer deposition (ALD), as well as pulsed MOCVD technologies, and focusing on cobalt source precursors, thin and ultrathin film growth processes, and the resulting effects on film composition, resistivity and other pertinent properties.

    Silicon Chemistry, Applied Technology, Applied Technology

    Thin-Film Deposition of Silicon Nitrides and Oxides from Trihydridosilanes