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- Einecs Number 236-477-9
- HMIS 3-1-1-X
- Molecular Formula C10H14CuO4
- Molecular Weight (g/mol) 261.76
- TSCA Yes
- Boiling Point (˚C/mmHg) NA
- Density (g/mL) 1.594
- Melting Point (˚C) 238-40° dec
Catalyst for the reduction of nitro-aromatics with NaBH4.1
Catalyst for hydrogenation of unsaturated fats.2
Catalyst for flexible urethanes.3
Excimer laser induces deposition of copper.4
MOCVD generates copper oxide films.5
Forms ferromagnetic chains on photolysis with diazodi-4-pyridylmethane.6
1. Hanaya, K. et al. J. Chem. Soc., Perkin Trans. 1979, 1, 2409.
2. Emken, E. et al. J. Am. Oil Chem. Soc. 1966, 43, 14.
3. Chem. Abstr. 68, 3566d; Fr. Patent 1,481,815, 1968.
4. Jones, C. et al. Appl. Phys. Lett. 1985, 46, 97.
5. Ryabova, L. In Current Topics in Material Science Kaldis, E. Ed. 1981, 7, 598.
6. Sano, Y. et al. J. Am. Chem. Soc. 1997, 119, 8246.
Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.
Copper (II) 2,4-pentanedionate; Cupric acetylacetonate