To search by structure, left click in the box below to display the chemdraw toolbar. Then, draw the chemical structure of interest in the box using the toolbar. When your structure is complete, click “Search by Name” or “Search by SMILES” to generate the product name or SMILES respectively. This feature will search within the Gelest product database for matching chemical names or SMILES. Note: In cases where Gelest uses alternate chemical names, it may be necessary to search for the product of interest by its CAS#.
- Einecs Number 238-850-1
- HMIS 3-1-0-X
- Molecular Formula C10H2CuF12O4·2H2O
- Molecular Weight (g/mol) 477.64/513.68
- TSCA No
- Boiling Point (˚C/mmHg) 100° / 0.5 sub
- Melting Point (˚C) 130°
Employed in CVD of superconductors.1
Catalyst for addition of diazopentanediones to aldehydes and ketones to form dioxoles.2
Cu thin films deposited with H2 at 250°.3,4,5
Forms ferromagnetic chains on photolysis with diazodi-4-pyridylmethane.6
1. Nemota, M. et al. J. Mater. Res. 1990, 5, 1.
2. Alonso, M. et al. J. Org. Chem. 1985, 50, 3445.
3. VanHemert, R. et al. J. Electrochem. Soc. 1965, 112, 1123.
4. Mosher, R. et al. U.S. Patent 3,356,527, 1967.
5. Eisenbraun, E. et al. In Advanced Metallization for ULSI Applications, 1992, Cale, T. et al. Ed.;MRS, 1993, p. 107.
6. Sano, Y. et al. J. Am. Chem. Soc. 1997, 119, 8246.
Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.
Copper (II) hexafluoro-2,4-pentanedionate, dihydrate; Cupric hexafluoroacetylacetonate