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- HMIS 3-2-1-X
- Molecular Formula C13H13CuF6O2
- Molecular Weight (g/mol) 378.77
- TSCA No
- Boiling Point (˚C/mmHg) >60° / 0.1 sub
- Melting Point (˚C) 82-4°
MOCVD source of Cu2O with potential in solar energy applications.1
MOCVD source of Cu seed layer.2
1. Hampden-Smith, M. et al. 202nd ACS Nat'l Mt'g Abstr. 1991, 144.
2. Lee, W. et al. J. Vac. Sci. Technol., A 2001, 19(6), 2974.