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Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.
Diiodosilane; Silicon diiodide
Boiling Point: 149-150°
Melting Point: -1°
Molecular Weight: 283.91
Specific Gravity: 2.834
Flashpoint: 38°C (100°F)
HMIS Key: 3-2-2-X
Hydrolytic Sensitivity: 9: reacts extremely rapidly with atmospheric moisture - may be pyrophoric - glove box or sealed system required
Application: Cleaves ethers; converts alcohols to iodides.1
Reagent for conversion of carbamates to ureas via isocyanates.2
Reference: 1. Keinan, E. et al. J. Org. Chem. 1987, 52, 4846.
2. Gastaldi, S. et al. J. Org. Chem. 2000, 65, 3239.
Additional Properties: Surface tension, 15°: 44.1 mN/m?Hvap: 8.05 kcal/moleVapor pressure, 60°: 25 mm