- Einecs Number 240-171-0
- Synonyms TRIMETHYLSILYL IODIDE
- HMIS 3-4-1-X
- Molecular Formula C3H9ISi
- Molecular Weight (g/mol) 200.1
- Purity (%) 97%
- TSCA Yes
- Boiling Point (˚C/mmHg) 106-107
- Density (g/mL) 1.470
- Flash Point (˚C) -2 °C
- Refractive Index @ 20˚C 1.4742
Reagent for cleavage of ethers, esters, lactones.3
Used to dechlorinate aryl chlorides.4
Allylates aldehydes in the presence of allyl chloride and tin tetraiodide (SNT7946).5
1. Handbook of Reagents for Organic Synthesis, Reagents for Silicon-Mediated Organic Synthesis, Fuchs, P. L. Ed., John Wiley and Sons, Ltd., 2011, p. 325-336.
2. Olah, G. et al. In Advances in Silicon Chemistry; Larson, G., Ed.; JAI Press: Greenwich, Co, 1991; Vol. 1, p.1.
3. DePew, K. M. et al. J. Org. Chem. 1999, 121, 11953.
4. Sako, M. et al. J. Org. Chem. 2001, 66, 3610.
5. Masuyama, Y. et al. Tetrahedron Lett. 2005, 46, 2861.
Trimethylsilyl Blocking Agent
Used as a protecting group for reactive hydrogens in alcohols, amines, thiols, and carboxylic acids. Organosilanes are hydrogen-like, can be introduced in high yield, and can be removed under selective conditions. They are stable over a wide range of reaction conditions and can be removed in the presence of other functional groups, including other protecting groups. The tolerance of silylated alcohols to chemical transformations summary is presented in Table 1 of the Silicon-Based Blocking Agents brochure.
Trimethyliodosilane; Iodotrimethylsilane, Trimethylsilyl iodide; TMIS
Silicon Chemistry, Articles
Silicon Chemistry, Applied Technology
This article provides an overview of the state-of-the-art chemistry and processing technologies for silicon nitride and silicon nitride- rich films, i.e., silicon nitride with C inclusion, both in hydrogenated (SiNx:H and SiNx:H(C)) and non-hydrogenated (SiNx and SiNx(C)) forms. The emphasis is on emerging trends and innovations in these SiNx material system technologies, with focus on Si and N source chemistries and thin film growth processes, including their primary effects on resulting film properties. It also illustrates that SiNx and its SiNx(C) derivative are the focus of an ever-growing research and manufacturing interest and that their potential usages are expanding into new technological areas.