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Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.
1,1,3,3-Tetramethyldisilazane; Bis(dimethylsilyl)amine; TMDS; TMDZ
Boiling Point: 99-100°
EINECS Number: 240-072-2
Molecular Weight: 133.34
Specific Gravity: 0.766
Flashpoint: 11°C (52°F)
HMIS Key: 3-4-1-X
Hydrolytic Sensitivity: 7: reacts slowly with moisture/water
Refractive Index: 1.4044
Application: Review of synthetic utility.1
Converts unsaturated alcohols to diols.2
Converts homopropargylic alcohols to ?-hydroxy ketones in a three-step process.3
Employed in the silylation/hydrosilylation of allylic alcohols leading to useful cyclic alkoxysilane intermediates.4
Reference: 1. Handbook of Reagents for Organic Synthesis, Reagents for Silicon-Mediated Organic Synthesis, Fuchs, P. L. Ed., John Wiley and Sons, Ltd., 2011, p. 488-490.
2. Tamao, K. et al. J. Am. Chem. Soc. 1988, 110, 3712.
3. Marshall, J. A.; Yanik, M.W. Org. Lett. 2000, 2, 2173.
4. Tamao, K. et al. J. Am. Chem. Soc. 1986, 108, 6090.
Additional Properties: 208Forms dimethylsilyl ethers with greater volatility than trimethylsilyl ethers