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Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.
Octamethylcyclotetrasiloxane; D4; Cyclic tetramer; Cyclomethicone; Cyclohexasiloxane; Cyclotetrasiloxane; OMCTS
Boiling Point: 175-6°
EINECS Number: 209-136-7
Melting Point: 17.4°
Molecular Weight: 296.61
Alternative Name: D4
Specific Gravity: 0.956
Flashpoint: 51°C (124°F)
HMIS Key: 1-2-0-X
Hydrolytic Sensitivity: TSCA
Refractive Index: 1.3968
Additional Properties: 400Ea, polym: 19 kcal/moleSolubility, water: 50 ?g/lDipole moment: 1.09 debyeSpecific heat: 120 cal/g/°Dielectric constant: 2.39Coefficient of thermal expansion: 0.8 x10-3Ring strain: 0.24 kcal/moleCryoscopic constant: 11.2Surface tension, 20°: 17.9 mN/mHenry's law constant, Hc: 3.4 ± 1.7Octanol/water partition coefficient, log Kow: 5.1Basic building block for silicones by ring-opening polymerizationVapor pressure, 23°: 1 mmCritical temperature: 314°Critical pressure: 1.03 mPa?Hvap: 10.9 kcal/mole