COMMERCIAL
556-67-2

All structures are computer generated. Please rely on the product data below for placing your order. If you see any errors in structures, please email customer service so that they can be addressed.

OCTAMETHYLCYCLOTETRASILOXANE, 98%

Product Code: SIO6700.0

Cas No: 556-67-2

R&D quantities:

15 kg
$405.00
2 kg
$86.00
100 g
$15.00
ALD Material

Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.

Octamethylcyclotetrasiloxane; D4; Cyclic tetramer; Cyclomethicone; Cyclohexasiloxane; Cyclotetrasiloxane; OMCTS
  • Viscosity: 2.3 cSt
  • ΔHfus: 18.4 kJ/mol
  • ΔHvap: 45.6 kJ/mol
  • Dipole moment: 1.09 debye
  • Vapor pressure, 23 °C: 1 mm
  • Dielectric constant: 2.39
  • Ring strain: 1.00 kJ/mol
  • Surface tension, 20 °C: 17.9 mN/m
  • Critical temperature: 314 °C
  • Critical pressure: 1.03 mPa
  • Specific heat: 502 J/g/°
  • Coefficient of thermal expansion: 0.8 x 10-3
  • Cryoscopic constant: 11.2
  • Henry’s law constant, Hc: 3.4 ± 1.7
  • Ea, polym: 79 kJ/mol
  • Octanol/water partition coefficient, log Kow: 5.1
  • Basic building block for silicones by ring-opening polymerization
  • Solubility, water: 50 ?g/l
  • Boiling Point: 175-6°

    EINECS Number: 209-136-7

    Melting Point: 17.4°

    Molecular Weight: 296.61

    Alternative Name: D4

    Specific Gravity: 0.956

    Flashpoint: 51°C (124°F)

    HMIS Key: 1-2-0-X

    Hydrolytic Sensitivity: TSCA

    Formula: C8H24O4Si4

    Purity: 98%

    Refractive Index: 1.3968

    TSCA: TSCA

    Additional Properties: 400
    Ea, polym: 19 kcal/mole
    Solubility, water: 50 ?g/l
    Dipole moment: 1.09 debye
    Specific heat: 120 cal/g/°
    Dielectric constant: 2.39
    Coefficient of thermal expansion: 0.8 x10-3
    Ring strain: 0.24 kcal/mole
    Cryoscopic constant: 11.2
    Surface tension, 20°: 17.9 mN/m
    Henry's law constant, Hc: 3.4 ± 1.7
    Octanol/water partition coefficient, log Kow: 5.1
    Basic building block for silicones by ring-opening polymerization
    Vapor pressure, 23°: 1 mm
    Critical temperature: 314°
    Critical pressure: 1.03 mPa
    ?Hvap: 10.9 kcal/mole