To search by structure, left click in the box below to display the chemdraw toolbar. Then, draw the chemical structure of interest in the box using the toolbar. When your structure is complete, click “Search by Name” or “Search by SMILES” to generate the product name or SMILES respectively. This feature will search within the Gelest product database for matching chemical names or SMILES. Note: In cases where Gelest uses alternate chemical names, it may be necessary to search for the product of interest by its CAS#.
All structures are computer generated. Please rely on the product data below for placing your order. If you see any errors in structures, please email customer service so that they can be addressed.
Boiling Point: 112-3°
EINECS Number: 215-911-0
Melting Point: 12-14°
Molecular Weight: 146.38
Alternative Name: HMD
Specific Gravity: 0.7293
Flashpoint: -1°C (30°F)
HMIS Key: 2-4-0-X
Hydrolytic Sensitivity: 1: no significant reaction with aqueous systems
Refractive Index: 1.4214
Application: Review of synthetic utility.1
Source for trimethylsilyl anion.2,3
Replaces aromatic nitriles with TMS groups in presence of [RhCl(cod)]2.4
Precursor for CVD of silicon carbide.5
Brings about the homocoupling of arenesulfonyl chlorides in the presence of Pd2(dba)3.6
Used as a solvent for the direct borylation of fluoroaromatics.7
Reacts with alkynes to form siloles.8
Undergoes the silylation of acid chlorides to give acylsilanes.9
Reference: 1. Handbook of Reagents for Organic Synthesis, Reagents for Silicon-Mediated Organic Synthesis, Fuchs, P. L. Ed., John Wiley and Sons, Ltd., 2011, p. 278-284.
2. Shippey, M. A. et al. J. Org. Chem. 1977, 42, 2654.
3. F&F: Vol. 10, p 96; Vol.11, p 253.
4. Tobisu, M. et al. J. Am. Chem. Soc. 2006, 128, 4152.
5. Thin Solid Films 1999, 252, 13.
6. Kashiwabara, T.; Tanaka, M. Tetrahedron Lett. 2005, 46, 7125.
7. Teltewskoi, M. et al. Angew. Chem., Int. Ed. Engl. 2010, 49, 3947.
8. >Akagawa, K. et al. Synlett 2011, 22, 813.
9. Capperucci, A. et al. J. Org. Chem. 1988, 53, 3612.
Additional Properties: Ionization energy: 8.69 eVUV max: 192.9 nm?Hcomb: 1,411.7 kcal/mole?Hform (gas): -118 kcal/mole?Hvap: 9.5 kcal/moleRotational barrier, Si-Si: 1.05 kcal/moleEa decomposition at 545°K: 80.5 kcal/moleVapor pressure, 20°: 22.9 mm