1450-14-2

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HEXAMETHYLDISILANE

Product Code: SIH6109.0

Cas No: 1450-14-2

R&D quantities:

1.5 kg
$456.00
100 g
$162.00
25 g
$50.00
Hexamethyldisilane; HMD; 2,2,3,3-Tetramethyl-2,3-disilabutane
  • Viscosity: 1.0 cSt
  • ΔHcomb: 5,909 kJ/mol
  • ΔHform: -494 kJ/mol
  • ΔHvap: 39.8 kJ/mol
  • Vapor pressure, 20 °C: 22.9 mm
  • Ea decomposition at 545 K: 337 kJ/mol
  • Rotational barrier, Si–Si: 4.40 kJ/mol
  • Secondary NMR reference: δ = 0.045
  • Source for trimethylsilyl anion
  • Replaces aromatic nitriles with TMS groups in presence of [RhCl(cod)]2
  • Precursor for CVD of silicon carbide
  • Brings about the homocoupling of arenesulfonyl chlorides in the presence of Pd2(dba)3
  • Used as a solvent for the direct borylation of fluoroaromatics
  • Reacts with alkynes to form siloles
  • Undergoes the silylation of acid chlorides to give acylsilanes
  • Boiling Point: 112-3°

    EINECS Number: 215-911-0

    Melting Point: 12-14°

    Molecular Weight: 146.38

    Alternative Name: HMD

    Specific Gravity: 0.7293

    Flashpoint: -1°C (30°F)

    HMIS Key: 2-4-0-X

    Hydrolytic Sensitivity: 1: no significant reaction with aqueous systems

    Formula: C6H18Si2

    Refractive Index: 1.4214

    TSCA: TSCA

    Application: Review of synthetic utility.1
    Source for trimethylsilyl anion.2,3
    Replaces aromatic nitriles with TMS groups in presence of [RhCl(cod)]2.4
    Precursor for CVD of silicon carbide.5
    Brings about the homocoupling of arenesulfonyl chlorides in the presence of Pd2(dba)3.6
    Used as a solvent for the direct borylation of fluoroaromatics.7
    Reacts with alkynes to form siloles.8
    Undergoes the silylation of acid chlorides to give acylsilanes.9

    Reference: 1. Handbook of Reagents for Organic Synthesis, Reagents for Silicon-Mediated Organic Synthesis, Fuchs, P. L. Ed., John Wiley and Sons, Ltd., 2011, p. 278-284.
    2. Shippey, M. A. et al. J. Org. Chem. 1977, 42, 2654.
    3. F&F: Vol. 10, p 96; Vol.11, p 253.
    4. Tobisu, M. et al. J. Am. Chem. Soc. 2006, 128, 4152.
    5. Thin Solid Films 1999, 252, 13.
    6. Kashiwabara, T.; Tanaka, M. Tetrahedron Lett. 2005, 46, 7125.
    7. Teltewskoi, M. et al. Angew. Chem., Int. Ed. Engl. 2010, 49, 3947.
    8. Akagawa, K. et al. Synlett 2011, 22, 813.
    9. Capperucci, A. et al. J. Org. Chem. 1988, 53, 3612.

    Additional Properties: Ionization energy: 8.69 eV
    UV max: 192.9 nm
    ?Hcomb: 1,411.7 kcal/mole
    ?Hform (gas): -118 kcal/mole
    ?Hvap: 9.5 kcal/mole
    Rotational barrier, Si-Si: 1.05 kcal/mole
    Ea decomposition at 545°K: 80.5 kcal/mole
    Vapor pressure, 20°: 22.9 mm