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Product Code: SIH6109.0

Cas No: 1450-14-2

R&D quantities:


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Boiling Point: 112-3°

EINECS Number: 215-911-0

Melting Point: 12-14°

Molecular Weight: 146.38

Alternative Name: HMD

Specific Gravity: 0.7293

Flashpoint: -1°C (30°F)

HMIS Key: 2-4-0-X

Hydrolytic Sensitivity: 1: no significant reaction with aqueous systems

Formula: C6H18Si2

Refractive Index: 1.4214


Application: Review of synthetic utility.1
Source for trimethylsilyl anion.2,3
Replaces aromatic nitriles with TMS groups in presence of [RhCl(cod)]2.4
Precursor for CVD of silicon carbide.5
Brings about the homocoupling of arenesulfonyl chlorides in the presence of Pd2(dba)3.6
Used as a solvent for the direct borylation of fluoroaromatics.7
Reacts with alkynes to form siloles.8
Undergoes the silylation of acid chlorides to give acylsilanes.9

Reference: 1. Handbook of Reagents for Organic Synthesis, Reagents for Silicon-Mediated Organic Synthesis, Fuchs, P. L. Ed., John Wiley and Sons, Ltd., 2011, p. 278-284.
2. Shippey, M. A. et al. J. Org. Chem. 1977, 42, 2654.
3. F&F: Vol. 10, p 96; Vol.11, p 253.
4. Tobisu, M. et al. J. Am. Chem. Soc. 2006, 128, 4152.
5. Thin Solid Films 1999, 252, 13.
6. Kashiwabara, T.; Tanaka, M. Tetrahedron Lett. 2005, 46, 7125.
7. Teltewskoi, M. et al. Angew. Chem., Int. Ed. Engl. 2010, 49, 3947.
8. Akagawa, K. et al. Synlett 2011, 22, 813.
9. Capperucci, A. et al. J. Org. Chem. 1988, 53, 3612.

Additional Properties: Ionization energy: 8.69 eV
UV max: 192.9 nm
?Hcomb: 1,411.7 kcal/mole
?Hform (gas): -118 kcal/mole
?Hvap: 9.5 kcal/mole
Rotational barrier, Si-Si: 1.05 kcal/mole
Ea decomposition at 545°K: 80.5 kcal/mole
Vapor pressure, 20°: 22.9 mm