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Carbosilanes are compounds in which the elements of silicon and carbon alternate in a molecular framework or polymeric backbone in an approximate ratio of 1:1. By appropriate selection of the carbosilane precursor and deposition conditions the silicon carbide framework can be shifted toward substituted silicon and diamond-like structures.
Volatile Higher Silane
Volatile higher silanes are low temperature, high deposition rate precursors. By appropriate selection of precursor and deposition conditions, silicon deposition can be shifted from amorphous hydrogenated silicon toward microcrystalline silicon structures. As the number of silicon atoms increases beyond two, electrons are capable of sigma–sigma bond conjugation. The dissociative adsorption of two of the three hydrogen atoms on terminal silicon atoms has a lower energy barrier.
Flashpoint: 103°C (217°F)
HMIS Key: 1-1-0-X
Application: Employed in CVD of silicon carbonitride films.1
Forms polycarbosilanes at elevated temperature.2
Reference: 1. Scarlete, M. et al. US Patent 7,396,563, 2008. (label licensed Gelest Product)
2. Yajima, S. et al. J. Mater. Sci. 1978, 13, 2569.
Additional Properties: Solid state source for volatile siliconcarbonitride (SiCN) precursors utilized in passivation of silicon-based photovoltaics