POLY(DIMETHYLSILANE)

Product Code: PSS-1M01
CAS No: 30107-43-8 or 28883-63-8
SDS Sheets: EU | US
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30107-43-8 or 28883-63-8
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Pack Size
Quantity
Price
 
100 g
$220.00

Prices listed are EXW price (Morrisville, PA US) in USD. Prices vary depending on currency and Incoterms.

Product data and descriptions listed are typical values, not intended to be used as specification.

  • HMIS

    1-1-0-X
  • Molecular Weight (g/mol)

    1,000-3,000
  • TSCA

    Yes
  • Boiling Point (˚C/mmHg)

    NA
  • Flash Point (˚C)

    103 °C

Application

Employed in CVD of silicon carbonitride films.1
Forms polycarbosilanes at elevated temperature.2

Reference

1. Scarlete, M. et al. US Patent 7,396,563, 2008. (label licensed Gelest Product)
2. Yajima, S. et al. J. Mater. Sci. 1978, 13, 2569.

Safety

  • Packaging Under

    Nitrogen

    • Volatile Carbosilane

    Carbosilanes are compounds in which the elements of silicon and carbon alternate in a molecular framework or polymeric backbone in an approximate ratio of 1:1. By appropriate selection of the carbosilane precursor and deposition conditions the silicon carbide framework can be shifted toward substituted silicon and diamond-like structures.

    Volatile Higher Silane

    Volatile higher silanes are low temperature, high deposition rate precursors. By appropriate selection of precursor and deposition conditions, silicon deposition can be shifted from amorphous hydrogenated silicon toward microcrystalline silicon structures. As the number of silicon atoms increases beyond two, electrons are capable of sigma–sigma bond conjugation. The dissociative adsorption of two of the three hydrogen atoms on terminal silicon atoms has a lower energy barrier.

    Poly(dimethylsilane); Polydimethylsilene

  • Pre-ceramic polymer
  • Undergoes substantial degradation before reaching its melting point, 250-270 °C
  • DP: 25-50
  • Forms polycarbosilanes at elevated temperatures
  • Solid state source for volatile siliconcarbonitride (SiCN) precursors utilized in passivation of silicon-based photovoltaics
  • Employed in CVD of silicon carbonitride films
  • Converts to a carbosilane at temperatures above 650 °C

    • Silicon Chemistry, Applied Technology, Metal-Organic Chemistry, Applied Chemistry & Physics

    Low Temperature Inorganic CVD of Ti-Si-N Diffusion Barrier Liners for Gigascale Copper Interconnect Applications – Eisenbraun et al.

    Silicon Chemistry, Applied Technology

    Silicon Nitride Films by Atmospheric Pressure CVD

    Silicon Chemistry, Applied Technology, Metal-Organic Chemistry, Applied Chemistry & Physics

    Synthesizing Low-k CVD Materials for Fab Use – Arkles et al.