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Product Code: INZR065

Cas No: 10026-11-6

500 g
100 g
ALD Material

Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.

Zirconium tetrachloride; Tetrachlorozirconium; Zirconium(IV) chloride, anhydrous
  • ΔHsub: 100 kcal/mol
  • Vapor pressure, 190 °C: 1 mm
  • EINECS Number: 233-058-2

    Specific Gravity: 2.803

    HMIS Key: 3-0-1-X

    Hydrolytic Sensitivity: 7: reacts slowly with moisture/water

    Formula: Cl4Zr

    Purity: 99%


    Fieser: F&F: Vol. 1, p 1295.

    Additional Properties: ?Hsub: 100 kJ/mole