All structures are computer generated. Please rely on the product data below for placing your order. If you see any errors in structures, please email customer service so that they can be addressed.


Product Code: INTI065

Cas No: 7550-45-0

2.5 kg
25 g
160 kg
Contact Us For Pricing
20 kg
Contact Us For Pricing

Product data and descriptions listed are typical values, not intended to be used as specification.

ALD Material

Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.

Titanium tetrachloride; Titanium IVv chloride
  • ΔHform: -198.4 kcal/mol
  • EINECS Number: 231-441-9

    Specific Gravity: 1.730

    HMIS Key: 3-0-2-X

    Hydrolytic Sensitivity: 8: reacts rapidly with moisture, water, protic solvents

    Formula: Cl4Ti


    Fieser: F&F: Vol. 1, p 1169; Vol. 2, p 414; Vol. 3, p 291; Vol. 4, p 507; Vol. 5, p 671; Vol. 6, p 590.

    Additional Properties: ?Hform: -198.4 kcal/mole