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- Einecs Number 228-010-2
- HMIS 2-2-1-X
- Molecular Formula C10H25O5Ta
- Molecular Weight (g/mol) 406.26
- TSCA Yes
- Boiling Point (˚C/mmHg) 145° / 0.1
- Density (g/mL) 1.566
- Flash Point (˚C) 40°C (104°F)
- Melting Point (˚C) 18-9°
- Refractive Index @ 20˚C 1.4855
Employed in sol-gel synthesis of bulk and thin film Ta2O5 as a capacitor dielectric.1
Employed in sol-gel synthesis of lithium tantalate ferroelectrics.2
Forms chiral complexes with substituted trialkanolamines useful in asymmetric catalysis.3
Employed in low-pressure CVD of optical interference filters.4
1. Ling, H. et al. In Science of Ceramic Processing, Hench, Ed.; Wiley 1986.
2. Pluré, P. J. Mater. Res. 1993, 8, 334.
3. Nugent, W. et al. J. Am. Chem. Soc. 1994, 116, 6142.
4. George, M. et al. Vacuum Techn. Sci. 2000, 22.
Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.
Tantalum(V) ethoxide; Pentaethoxytantalum; Tantalum(5+) ethanolate