6074-84-6

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TANTALUM(V) ETHOXIDE

Product Code: AKT810

Cas No: 6074-84-6

R&D quantities:

25 g
$210.00
5 g
$53.00
ALD Material

Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.

Tantalum(V) ethoxide; Pentaethoxytantalum; Tantalum(5+) ethanolate
  • Soluble: toluene, ethanol
  • Vapor pressure, 20 °C: 8 mm
  • Vapor pressure, 50 °C: 26 mm
  • Molecular complexity: 1.98
  • Employed in sol-gel synthesis of bulk and thin film Ta2O5 as a capacitor dielectric
  • Employed in sol-gel synthesis of lithium tantalate ferroelectrics
  • Forms chiral complexes with substituted trialkanolamines useful in asymmetric catalysis
  • Employed in low-pressure CVD of optical interference filters
  • Tavalite® jewelry in which alternating TaO5-SiO2 are deposited onto cubic zirconia
  • Boiling Point: 145° / 0.1

    EINECS Number: 228-010-2

    Melting Point: 18-9°

    Molecular Weight: 406.26

    Specific Gravity: 1.566

    Flashpoint: 40°C (104°F)

    HMIS Key: 2-2-1-X

    Hydrolytic Sensitivity: 8: reacts rapidly with moisture, water, protic solvents

    Formula: C10H25O5Ta

    Refractive Index: 1.4855

    TSCA: TSCA

    Application: Employed in sol-gel synthesis of bulk and thin film Ta2O5 as a capacitor dielectric.1
    Employed in sol-gel synthesis of lithium tantalate ferroelectrics.2
    Forms chiral complexes with substituted trialkanolamines useful in asymmetric catalysis.3
    Employed in low-pressure CVD of optical interference filters.4

    Reference: 1. Ling, H. et al. In Science of Ceramic Processing, Hench, Ed.; Wiley 1986.
    2. Pluré, P. J. Mater. Res. 1993, 8, 334.
    3. Nugent, W. et al. J. Am. Chem. Soc. 1994, 116, 6142.
    4. George, M. et al. Vacuum Techn. Sci. 2000, 22.

    Additional Properties: Soluble: toluene, ethanol
    Molecular complexity: 1.98
    (>99.9+% on Ta basis)
    Vapor pressure, 20°: 8 mm
    Vapor pressure, 50°: 26 mm