Abstract: Metal Oxide Resists (MOR) are critical for achieving high-resolution patterning in extreme ultraviolet (EUV) lithography. Lam’s Aether program has demonstrated that dry development of MORs can address pattern collapse, enhanced resolution, and reduce line edge roughness. Here we discuss the chemistry of dry resist precursors, their advantages compared to spin-on MOR materials, and how Gelest is ready to move toward HVM manufacturing to support Lam Aether program into the industry.
Presenter Biography: Li Yang, Ph.D., has been leading Gelest’s synthesis R&D group since 2020, overseeing the design, planning, execution, and completion of new precursor development projects. With over eight years of industry experience, he specializes in semiconductor R&D, analytical equipment, and advanced materials. Li has extensive expertise in silane and metal-organic precursor synthesis and collaborates closely with both Gelest’s internal film deposition R&D team and external customers. Li earned his Ph.D. in organic chemistry from the University of North Texas in 2015, where his research focused on ligand design, organometallic synthesis, and C-H bond activation mechanisms. During his three-year postdoctoral appointment, he worked on tantalum nitride (TaN) precursor development and chiral cluster synthesis.
