Additional Properties
- HMIS 2-4-1-X
- Molecular Formula C4H12Ge
- Molecular Weight (g/mol) 132.78
- Purity (%) 97%
- TSCA No
- Boiling Point (˚C/mmHg) 68
- Density (g/mL) 1.002
- Melting Point (˚C) -78°
Application
Applied to the low temperature growth of Ge films on GeSi films.1
Liquid germanium precursor for growth of high-purity Ge and GeSi films.2
Reference
1. Woelk, E. et al. Semiconductor International 2006, 29, 39.
2. Shenai, D. V. et al. J. Crystal. Growth 2007, 298, 172.
Safety
