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- HMIS 2-4-1-X
- Molecular Formula C4H12Ge
- Molecular Weight (g/mol) 132.78
- Boiling Point (˚C/mmHg) 68°
- Density (g/mL) 1.002
- Melting Point (˚C) -78°
Additional Properties
Application
Applied to the low temperature growth of Ge films on GeSi films.1
Liquid germanium precursor for growth of high-purity Ge and GeSi films.2
Reference
1. Woelk, E. et al. Semiconductor International 2006, 29, 39.
2. Shenai, D. V. et al. J. Crystal. Growth 2007, 298, 172.
Safety
Related Products
Germanium Compounds