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ISOBUTYLGERMANE
HMIS Key: 2-4-1-X
Hydrolytic Sensitivity: 7: reacts slowly with moisture/water
Formula: C4H12Ge
Application: Applied to the low temperature growth of Ge films on GeSi films.1
Liquid germanium precursor for growth of high-purity Ge and GeSi films.2
Reference: 1. Woelk, E. et al. Semiconductor International 2006, 29, 39.
2. Shenai, D. V. et al. J. Crystal. Growth 2007, 298, 172.
Germanium Compounds
Gases