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Product Code: SIN6597.07

Cas No: 15947-57-6

Volatile Higher Silane

Volatile higher silanes are low temperature, high deposition rate precursors. By appropriate selection of precursor and deposition conditions, silicon deposition can be shifted from amorphous hydrogenated silicon toward microcrystalline silicon structures. As the number of silicon atoms increases beyond two, electrons are capable of sigma–sigma bond conjugation. The dissociative adsorption of two of the three hydrogen atoms on terminal silicon atoms has a lower energy barrier.

Neopentasilane; Tetrasilylsilane; 2,2-Disilyltrisilane

  • Dipole moment: 0.0 debye
  • Vapor pressure, 25 °C: 15 mm
  • Vapor pressure, 67 °C: 50 mm
  • Employed in CVD epitaxy of silicon
  • Forms silicon nanowires by gold nanoparticle catalyzed deposition
  • Boiling Point: 132-4°

    Molecular Weight: 152.52

    Alternative Name: NPS

    HMIS Key: 3-4-3-X

    Hydrolytic Sensitivity: 10: reacts extremely rapidly with moisture and oxygen - may be pyrophoric - sealed system required

    Formula: H12Si5

    Application: Employed in CVD epitaxy of silicon.1,2,3
    Forms silicon nanowires by gold nanoparticle catalyzed deposition.4

    Reference: 1. Sturm, J. et al. ECS Transactions, 2008, 16, 799.
    2. Chung, K. et al. Appl. Phys. Lett. 2008, 92, 113506.
    3. Singh, K. et al. U.S. Patent 7,645,339, 2010.
    4. Kampken, B. et al. Beilstein J. Nanotech. 2012, 3, 535.

    Additional Properties: Dipole moment: 0.0 debye
    Vapor pressure, 25°: 15 mm
    Vapor pressure, 67°: 50 mm