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Volatile Higher Silane
Volatile higher silanes are low temperature, high deposition rate precursors. By appropriate selection of precursor and deposition conditions, silicon deposition can be shifted from amorphous hydrogenated silicon toward microcrystalline silicon structures. As the number of silicon atoms increases beyond two, electrons are capable of sigma–sigma bond conjugation. The dissociative adsorption of two of the three hydrogen atoms on terminal silicon atoms has a lower energy barrier.
Isotetrasilane; (Trisilyl)silane; 2-Silyltrisilane
AIR TRANSPORT FORBIDDEN
Boiling Point: 101°
Melting Point: -99°
Molecular Weight: 122.42
Alternative Name: (TRISILYL)SLANE
Specific Gravity: 0.793
HMIS Key: 3-4-3-X
Hydrolytic Sensitivity: 10: reacts extremely rapidly with moisture and oxygen - may be pyrophoric - sealed system required
Refractive Index: 1.5449
Application: Precursor for low temp. epitaxy of doped crystalline silicon.1,2
Employed in low temperature CVD of amorphous silicon.2
Reference: 1. Francis, T. et al. US Pat. Appl. 20120003819, 2012.
2. Kanoh, H. et al. Jpn. J. Appl. Phys. 1993, 32, 2613.
Additional Properties: ?Hvap: 32.5 kJ/moleVapor pressure, 15°: 21 mm