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Product Code: SII6463.4

Cas No: 13597-87-0

Volatile Higher Silane

Volatile higher silanes are low temperature, high deposition rate precursors. By appropriate selection of precursor and deposition conditions, silicon deposition can be shifted from amorphous hydrogenated silicon toward microcrystalline silicon structures. As the number of silicon atoms increases beyond two, electrons are capable of sigma–sigma bond conjugation. The dissociative adsorption of two of the three hydrogen atoms on terminal silicon atoms has a lower energy barrier.

Isotetrasilane; (Trisilyl)silane; 2-Silyltrisilane


  • ΔHvap: 32.5 kJ/mol
  • Precursor for low temp. epitaxy of doped crystalline silicon
  • Employed in low temperature CVD of amorphous silicon
  • Boiling Point: 101°

    Melting Point: -99°

    Molecular Weight: 122.42

    Alternative Name: (TRISILYL)SLANE

    Specific Gravity: 0.793

    HMIS Key: 3-4-3-X

    Hydrolytic Sensitivity: 10: reacts extremely rapidly with moisture and oxygen - may be pyrophoric - sealed system required

    Formula: H10Si4

    Refractive Index: 1.5449


    Application: Precursor for low temp. epitaxy of doped crystalline silicon.1,2
    Employed in low temperature CVD of amorphous silicon.2

    Reference: 1. Francis, T. et al. US Pat. Appl. 20120003819, 2012.
    2. Kanoh, H. et al. Jpn. J. Appl. Phys. 1993, 32, 2613.

    Additional Properties: ?Hvap: 32.5 kJ/mole
    Vapor pressure, 15°: 21 mm