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Boiling Point: 101°
Melting Point: -99°
Molecular Weight: 122.42
Alternative Name: (TRISILYL)SLANE
Specific Gravity: 0.793
HMIS Key: 3-4-3-X
Refractive Index: 1.5449
Application: Precursor for low temp. epitaxy of doped crystalline silicon.1,2
Employed in low temperature CVD of amorphous silicon.2
Reference: 1. Francis, T. et al. US Pat. Appl. 20120003819, 2012.
2. Kanoh, H. et al. Jpn. J. Appl. Phys. 1993, 32, 2613.
Additional Properties: ?Hvap: 32.5 kJ/moleVapor pressure, 15°: 21 mm