Additional Properties
- Einecs Number 236-112-3
- Synonyms SILICON DI-t-BUTOXIDE DIACETATE
- HMIS 3-2-2-X
- Molecular Formula C12H24O6Si
- Molecular Weight (g/mol) 292.4
- Purity (%) 95%
- TSCA Yes
- Delta H Vaporization (kJ/mol) 81.7 kcal/mole
- Boiling Point (˚C/mmHg) 102/5
- Density (g/mL) 1.0196
- Flash Point (˚C) 95 °C
- Melting Point (˚C) -4°
- Refractive Index @ 20˚C 1.4040
Application
Source for silicon dioxide by LPCVD.1,3
Precursor for poly(di-t-butoxysiloxane) photoimageable polymers.2
Reference
1. Smolinsky, G. et al. Mater. Lett. 1986, 4, 256.
2. Senkevich, J. et al. Chem. Mater. 1999, 11, 1814.
3. Sakata, M. et al. J. Photopolymer Sci. and Tech. 1992, 5, 181.
Safety