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Boiling Point: 102° / 5
EINECS Number: 236-112-3
Melting Point: -4°
Molecular Weight: 292.40
Alternative Name: SILICON DI-t-BUTOXIDE DIACETATE
Specific Gravity: 1.0196
Flashpoint: 95°C (203°F)
HMIS Key: 3-2-2-X
Hydrolytic Sensitivity: 7: reacts slowly with moisture/water
Refractive Index: 1.4040
Application: Source for silicon dioxide by LPCVD.1,3
Precursor for poly(di-t-butoxysiloxane) photoimageable polymers.2
Reference: 1. Smolinsky, G. et al. Mater. Lett. 1986, 4, 256.
2. Senkevich, J. et al. Chem. Mater. 1999, 11, 1814.
3. Sakata, M. et al. J. Photopolymer Sci. and Tech. 1992, 5, 181.
Additional Properties: ?Hvap: 81.7 kcal/moleAdhesion promoter for silicone RTVsVapor pressure, 50°: 0.03 mm