594-27-4

All structures are computer generated. Please rely on the product data below for placing your order. If you see any errors in structures, please email customer service so that they can be addressed.

TETRAMETHYLTIN, 99%

Product Code: SNT7560.1

Cas No: 594-27-4

10 g
$76.00
ALD Material

Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.

Tetramethyltin; Tetramethylstannane
  • ΔHcomb: 903.5 kcal/mol
  • ΔHform, gas, 27 °: -13.6 kcal/mol
  • ΔHvap: 6.8 kcal/mol
  • Sn-Me bond dissociation energy: 227 kJ/mol
  • Ea, pyrolysis: 41.1 kcal/mol
  • Vapor pressure, -21 °C: 10 mm
  • Vapor pressure, 20 °C: 90 mm
  • Allows synthesis of even numbered alkanes
  • Converts acid chlorides to methyl ketones with benzylchlorobis(triphenyl phosphine)palladium
  • Forms aryl methyl ketones from aryl halides and CO in the presence of dicarbonylbis(triphenylphosphine)nickel
  • For CVD of tin oxide transparent conductive electrodes on glass for photovoltaics and sensors
  • Pyrolyzed in vacuum to tin at 600-750 °C
  • Pyrolyzed oxidatively to SnO at 350-600 °C
  • Forms transparent conductive oxides for photovoltaics by Plasma-enhanced chemical vapor deposition (PECVD)
  • Standard grade available, SNT7560
  • EINECS Number: 209-833-6

    Specific Gravity: 1.291

    HMIS Key: 3-4-0-X

    Hydrolytic Sensitivity: 1: no significant reaction with aqueous systems

    Formula: C4H12Sn

    Purity: 99%

    TSCA: TSCA

    Refractive Index: 1.4410