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Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.
n-Butyltrichlorotin ; Butyltintrichloride; n-Butyltrichlorostannane; Monobutyltin trichloride; Butyltrichlorostannane
Boiling Point: 93° / 10
EINECS Number: 214-263-6
Melting Point: -63°
Molecular Weight: 282.17
Specific Gravity: 1.693
HMIS Key: 3-1-1-X
Hydrolytic Sensitivity: 7: reacts slowly with moisture/water
Refractive Index: 1.5229
Application: In combination with fluorides produces doped films of tin oxide on glass at 650° used for low-emissivity windows.1
Catalyst for epoxidation and polymerization reactions.2
Reference: 1. Gitlitz, M. et al. CHEMTECH 1992, 22, 552.
2. F&F: Vol. 15, p 65.
Additional Properties: Dipole moment: 4.28 debye