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Product Code: SNB2000

Cas No: 1118-46-3

5 kg
250 g
25 g
20 kg
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ALD Material

Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.

n-Butyltrichlorotin ; Butyltintrichloride; n-Butyltrichlorostannane; Monobutyltin trichloride; Butyltrichlorostannane
  • Dipole moment: 4.28 debye
  • Produces doped films of tin oxide on glass at 650 °C in combination with fluorides
  • Used for low-emissivity windows
  • Catalyst for epoxidation and polymerization reactions
  • EINECS Number: 214-263-6

    Specific Gravity: 1.693

    HMIS Key: 3-1-1-X

    Hydrolytic Sensitivity: 7: reacts slowly with moisture/water

    Formula: C4H9Cl3Sn


    Refractive Index: 1.5229

    Application: In combination with fluorides produces doped films of tin oxide on glass at 650° used for low-emissivity windows.1
    Catalyst for epoxidation and polymerization reactions.2

    Reference: 1. Gitlitz, M. et al. CHEMTECH 1992, 22, 552.
    2. F&F: Vol. 15, p 65.

    Additional Properties: Dipole moment: 4.28 debye