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Product Code: SIZ9920.0

10 g

Product data and descriptions listed are typical values, not intended to be used as specification.

ALD Material

Atomic layer deposition (ALD) is a chemically self-limiting deposition technique that is based on the sequential use of a gaseous chemical process. A thin film (as fine as -0.1 Å per cycle) results from repeating the deposition sequence as many times as needed to reach a certain thickness. The major characteristic of the films is the resulting conformality and the controlled deposition manner. Precursor selection is key in ALD processes, namely finding molecules which will have enough reactivity to produce the desired films yet are stable enough to be handled and safely delivered to the reaction chamber.

Zirconium tris(2,2,5,5-tetramethyl-2,5-disilapyrrolidine)chloride; Tris(2,2,5,5-tetramethyl-2,5-disilapyrrole)zirconiumchloride
  • Light yellow solid
  • Contains tetrakis analog
  • For ALD of ZrO
  • HMIS Key: 3-2-1-X

    Hydrolytic Sensitivity: 7: reacts slowly with moisture/water

    Formula: C18H48ClN3Si6Zr

    Additional Properties: Light yellow solid
    For ALD of ZrO2