Additional Properties
- Synonyms TSA
- HMIS 4-4-3-X
- Molecular Formula H9Nsi3
- Molecular Weight (g/mol) 107.33
- TSCA No
- Boiling Point (˚C/mmHg) 52
- Density (g/mL) 0.895
- Density Temperature (˚C) -106
- Flash Point (˚C) -48 °C
- Melting Point (˚C) -106°
Safety
Silicon Chemistry, Applied Technology
This article provides an overview of the state-of-the-art chemistry and processing technologies for silicon nitride and silicon nitride- rich films, i.e., silicon nitride with C inclusion, both in hydrogenated (SiNx:H and SiNx:H(C)) and non-hydrogenated (SiNx and SiNx(C)) forms. The emphasis is on emerging trends and innovations in these SiNx material system technologies, with focus on Si and N source chemistries and thin film growth processes, including their primary effects on resulting film properties. It also illustrates that SiNx and its SiNx(C) derivative are the focus of an ever-growing research and manufacturing interest and that their potential usages are expanding into new technological areas.