Pack Size
Quantity
Price
 
5 g
$303.00

Product data and descriptions listed are typical values, not intended to be used as specification.

  • HMIS

    3-3-1-X
  • Molecular Formula

    HI3Si
  • Molecular Weight (g/mol)

    409.81
  • Boiling Point (˚C/mmHg)

    94-5° / 12
  • Density (g/mL)

    3.314

Additional Properties

  • Hydrolytic Sensitivity

    8: reacts rapidly with moisture, water, protic solvents
  • Safety

  • Packaging Under

    Nitrogen
  • Silicon Chemistry, Applied Technology

    Silicon Nitride and Silicon Nitride-Rich Thin Film Technologies: Trends in Deposition Techniques and Related Applications – Kaloyeros, Jove, Goff, & Arkles

    This article provides an overview of the state-of-the-art chemistry and processing technologies for silicon nitride and silicon nitride- rich films, i.e., silicon nitride with C inclusion, both in hydrogenated (SiNx:H and SiNx:H(C)) and non-hydrogenated (SiNx and SiNx(C)) forms. The emphasis is on emerging trends and innovations in these SiNx material system technologies, with focus on Si and N source chemistries and thin film growth processes, including their primary effects on resulting film properties. It also illustrates that SiNx and its SiNx(C) derivative are the focus of an ever-growing research and manufacturing interest and that their potential usages are expanding into new technological areas.