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- HMIS 3-3-1-X
- Molecular Formula C6H15FO3Si
- Molecular Weight (g/mol) 182.27
- Purity (%) 95%
- TSCA Yes
- Boiling Point (˚C/mmHg) 133-134°
- Density (g/mL) 0.94
Employed in CVD of silicon dioxide films with low dielectric constants.1,2,3
1. Homma, T. et al. J. Electrochem. Soc. 1993, 140, 687.
2. Hayashi, T. et al. J. Ceram. Soc. Japan 1997, 105, 428.
3. Gorman, B. P. et al. Appl. Phys. Lett. 2001, 79, 4010.