7783-29-1

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n-TETRASILANE

Product Code: SIT7880.0

Cas No: 7783-29-1

R&D quantities:

10 g
$1,650.00
Volatile Higher Silane

Volatile higher silanes are low temperature, high deposition rate precursors. By appropriate selection of precursor and deposition conditions, silicon deposition can be shifted from amorphous hydrogenated silicon toward microcrystalline silicon structures. As the number of silicon atoms increases beyond two, electrons are capable of sigma–sigma bond conjugation. The dissociative adsorption of two of the three hydrogen atoms on terminal silicon atoms has a lower energy barrier.

n-Tetrasilane; Decahydridotetrasilane
  • PYROPHORIC

  • AIR TRANSPORT FORBIDDEN

  • Contains 10-20% isotetrasilane
  • Vapor pressure, 20 °C: ~25 mm
  • Employed in low temperature CVD of amorphous silicon
  • Boiling Point: 107°

    Melting Point: -85 to -95°

    Molecular Weight: 122.42

    Alternative Name: DECAHYDRIDOTETRASILANE

    Specific Gravity: 0.825

    HMIS Key: 3-4-3-X

    Hydrolytic Sensitivity: 10: reacts extremely rapidly with moisture and oxygen - may be pyrophoric - sealed system required

    Formula: H10Si4

    Application: Employed in low temperature CVD of amorphous silicon.1

    Reference: 1. Kanoh, H. et al. Jpn. J. Appl. Phys. 1993, 32, 2613.

    Additional Properties: Contains 10-20% isotetrasilane
    Vapor pressure, 20°: ~25 mm