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Volatile Higher Silane
Volatile higher silanes are low temperature, high deposition rate precursors. By appropriate selection of precursor and deposition conditions, silicon deposition can be shifted from amorphous hydrogenated silicon toward microcrystalline silicon structures. As the number of silicon atoms increases beyond two, electrons are capable of sigma–sigma bond conjugation. The dissociative adsorption of two of the three hydrogen atoms on terminal silicon atoms has a lower energy barrier.
AIR TRANSPORT FORBIDDEN
Boiling Point: 107°
Melting Point: -85 to -95°
Molecular Weight: 122.42
Alternative Name: DECAHYDRIDOTETRASILANE
Specific Gravity: 0.825
HMIS Key: 3-4-3-X
Hydrolytic Sensitivity: 10: reacts extremely rapidly with moisture and oxygen - may be pyrophoric - sealed system required
Application: Employed in low temperature CVD of amorphous silicon.1
Reference: 1. Kanoh, H. et al. Jpn. J. Appl. Phys. 1993, 32, 2613.
Additional Properties: Contains 10-20% isotetrasilaneVapor pressure, 20°: ~25 mm