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Product Code: SIT7541.0

Cas No: 814-98-2

1 g

Product data and descriptions listed are typical values, not intended to be used as specification.

Volatile Carbosilane

Carbosilanes are compounds in which the elements of silicon and carbon alternate in a molecular framework or polymeric backbone in an approximate ratio of 1:1. By appropriate selection of the carbosilane precursor and deposition conditions the silicon carbide framework can be shifted toward substituted silicon and diamond-like structures.

Volatile Higher Silane

Volatile higher silanes are low temperature, high deposition rate precursors. By appropriate selection of precursor and deposition conditions, silicon deposition can be shifted from amorphous hydrogenated silicon toward microcrystalline silicon structures. As the number of silicon atoms increases beyond two, electrons are capable of sigma–sigma bond conjugation. The dissociative adsorption of two of the three hydrogen atoms on terminal silicon atoms has a lower energy barrier.

1,1,2,2-Tetramethyldisilane; 1,1-Dihydro-1,1,3,3-tetramethyldisilane; 4M2S
  • Forms low k carbon doped silicon dioxide films
  • Forms SiC nanowires by APCVD
  • Converts to a carbosilane at temperatures above 650 °C
  • Alternative Name: 4M2S

    Specific Gravity: 0.7202

    Flashpoint: -26°C (-15°F)

    HMIS Key: 2-4-1-X

    Hydrolytic Sensitivity: 3: reacts with aqueous base

    Formula: C4H14Si2


    Refractive Index: 1.429

    Application: Forms SiC nanowires by APCVD.1

    Reference: 1. Rho, D. Mater. Res. Soc. Symp. Proc. 2005, 832, 317.

    Additional Properties: Forms low k carbon doped silicon dioxide films