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1,1,2,2-TETRAMETHYLDISILANE
Boiling Point: 86-7°
Melting Point: -93°
Molecular Weight: 118.32
Alternative Name: 4M2S
Specific Gravity: 0.7202
Flashpoint: -26°C (-15°F)
HMIS Key: 2-4-1-X
Hydrolytic Sensitivity: 3: reacts with aqueous base
Formula: C4H14Si2
Refractive Index: 1.429
TSCA: TSCA
Application: Forms SiC nanowires by APCVD.1
Reference: 1. Rho, D. Mater. Res. Soc. Symp. Proc. 2005, 832, 317.
Additional Properties: Forms low k carbon doped silicon dioxide films
Silanes
Silicone
Methyl Silanes
Volatile Carbosilanes
Volatile Higher Silanes
Synthesizing Low-k CVD Materials for Fab Use – Arkles et al.
Low Temperature Inorganic CVD of Ti-Si-N Diffusion Barrier Liners for Gigascale Copper Interconnect Applications – Eisenbraun et al.
Silicon Nitride Films by Atmospheric Pressure CVD
Understanding ALD MLD and SAMs as they enter the fab – Arkles, Goff, & Kaloyeros