Pack Size
Quantity
Price
 
1 g
$152.00

Product data and descriptions listed are typical values, not intended to be used as specification.

  • Synonyms

    4M2S
  • HMIS

    2-4-1-X
  • Molecular Formula

    C4H14Si2
  • Molecular Weight (g/mol)

    118.32
  • TSCA

    Yes
  • Boiling Point (˚C/mmHg)

    86-7°
  • Density (g/mL)

    0.7202
  • Flash Point (˚C)

    -26°C (-15°F)
  • Melting Point (˚C)

    -93°
  • Refractive Index @ 20˚C

    1.429

Additional Properties

  • Hydrolytic Sensitivity

    3: reacts with aqueous base
  • Application

    Forms SiC nanowires by APCVD.1

    Reference

    1. Rho, D. Mater. Res. Soc. Symp. Proc. 2005, 832, 317.

    Safety

  • Packaging Under

    Nitrogen
  • Volatile Carbosilane

    Carbosilanes are compounds in which the elements of silicon and carbon alternate in a molecular framework or polymeric backbone in an approximate ratio of 1:1. By appropriate selection of the carbosilane precursor and deposition conditions the silicon carbide framework can be shifted toward substituted silicon and diamond-like structures.

    Volatile Higher Silane

    Volatile higher silanes are low temperature, high deposition rate precursors. By appropriate selection of precursor and deposition conditions, silicon deposition can be shifted from amorphous hydrogenated silicon toward microcrystalline silicon structures. As the number of silicon atoms increases beyond two, electrons are capable of sigma–sigma bond conjugation. The dissociative adsorption of two of the three hydrogen atoms on terminal silicon atoms has a lower energy barrier.

    1,1,2,2-Tetramethyldisilane; 1,1-Dihydro-1,1,3,3-tetramethyldisilane; 4M2S

  • Forms low k carbon doped silicon dioxide films
  • Forms SiC nanowires by APCVD
  • Converts to a carbosilane at temperatures above 650 °C
  • Silicon Chemistry, Applied Technology, Metal-Organic Chemistry, Applied Chemistry & Physics

    Silicon Chemistry, Applied Technology

    Silicon Chemistry, Applied Technology, Metal-Organic Chemistry, Applied Chemistry & Physics