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Carbosilanes are compounds in which the elements of silicon and carbon alternate in a molecular framework or polymeric backbone in an approximate ratio of 1:1. By appropriate selection of the carbosilane precursor and deposition conditions the silicon carbide framework can be shifted toward substituted silicon and diamond-like structures.
Volatile Higher Silane
Volatile higher silanes are low temperature, high deposition rate precursors. By appropriate selection of precursor and deposition conditions, silicon deposition can be shifted from amorphous hydrogenated silicon toward microcrystalline silicon structures. As the number of silicon atoms increases beyond two, electrons are capable of sigma–sigma bond conjugation. The dissociative adsorption of two of the three hydrogen atoms on terminal silicon atoms has a lower energy barrier.
1,1,2,2-Tetramethyldisilane; 1,1-Dihydro-1,1,3,3-tetramethyldisilane; 4M2S
Alternative Name: 4M2S
Specific Gravity: 0.7202
Flashpoint: -26°C (-15°F)
HMIS Key: 2-4-1-X
Hydrolytic Sensitivity: 3: reacts with aqueous base
Refractive Index: 1.429
Application: Forms SiC nanowires by APCVD.1
Reference: 1. Rho, D. Mater. Res. Soc. Symp. Proc. 2005, 832, 317.
Additional Properties: Forms low k carbon doped silicon dioxide films