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Boiling Point: 153-5°
EINECS Number: 211-155-0
Melting Point: -82°
Molecular Weight: 144.33
Specific Gravity: 0.762
Flashpoint: 32°C (90°F)
HMIS Key: 2-3-0-X
Hydrolytic Sensitivity: 1: no significant reaction with aqueous systems
Refractive Index: 1.4246
Application: Silicon dopant for n-type GaN thin films.1
Reference: 1. Obuci, Y. et al. J. Cryst. Growth 1997, 170, 325.
Additional Properties: 235?Hcomb: -1,597 kcal/mole?Hform: -41 kcal/mole?Hvap: 9.9 kcal/moleViscosity: 0.9 cSt