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- HMIS 3-2-1-X
- Molecular Formula C18H54N3PrSi6
- Molecular Weight (g/mol) 622.07
- TSCA No
- Boiling Point (˚C/mmHg) 88-90/10-4
- Melting Point (˚C) 154-7°
Precursor for 15-21 k dielectric films.1
1. Kukli, K. et al. Chem Mater. 2004, 16, 5162.