Pack Size
Quantity
Price
 
10 g
$385.00
100 g
Contact Us For Pricing

Product data and descriptions listed are typical values, not intended to be used as specification.

  • Einecs Number

    237-041-0
  • Synonyms

    OCTS
  • HMIS

    3-2-1-X
  • Molecular Formula

    Cl8Si3
  • Molecular Weight (g/mol)

    367.88
  • Purity (%)

    96%
  • TSCA

    Yes
  • Delta H Vaporization (kJ/mol)

    51 kJ/mole
  • Autoignition Temp (˚C)

    320
  • Boiling Point (˚C/mmHg)

    213-215
  • Density (g/mL)

    1.61
  • Flash Point (˚C)

    78
  • Melting Point (˚C)

    -67°
  • Refractive Index @ 20˚C

    1.513

Additional Properties

  • Hydrolytic Sensitivity

    8: reacts rapidly with moisture, water, protic solvents
  • Application

    Precursor for p- and n-doped silicon nanowires.1

    Reference

    1. Molanar, W. et al. J. Nanotechnol. 2012, 3, 564.

    Safety

  • Packaging Under

    Nitrogen
  • Silicon Chemistry, Applied Technology

    Silicon Nitride and Silicon Nitride-Rich Thin Film Technologies: Trends in Deposition Techniques and Related Applications – Kaloyeros, Jove, Goff, & Arkles

    This article provides an overview of the state-of-the-art chemistry and processing technologies for silicon nitride and silicon nitride- rich films, i.e., silicon nitride with C inclusion, both in hydrogenated (SiNx:H and SiNx:H(C)) and non-hydrogenated (SiNx and SiNx(C)) forms. The emphasis is on emerging trends and innovations in these SiNx material system technologies, with focus on Si and N source chemistries and thin film growth processes, including their primary effects on resulting film properties. It also illustrates that SiNx and its SiNx(C) derivative are the focus of an ever-growing research and manufacturing interest and that their potential usages are expanding into new technological areas.