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- Einecs Number 237-041-0
- Synonyms OCTS
- HMIS 3-2-1-X
- Molecular Formula Cl8Si3
- Molecular Weight (g/mol) 367.88
- Purity (%) 96%
- TSCA Yes
- Delta H Vaporization (kJ/mol) 51 kJ/mole
- Autoignition Temp (˚C) 320
- Boiling Point (˚C/mmHg) 213-215
- Density (g/mL) 1.61
- Flash Point (˚C) 78
- Melting Point (˚C) -67°
- Refractive Index @ 20˚C 1.513
Precursor for p- and n-doped silicon nanowires.1
1. Molanar, W. et al. J. Nanotechnol. 2012, 3, 564.
Silicon Chemistry, Applied Technology
This article provides an overview of the state-of-the-art chemistry and processing technologies for silicon nitride and silicon nitride- rich films, i.e., silicon nitride with C inclusion, both in hydrogenated (SiNx:H and SiNx:H(C)) and non-hydrogenated (SiNx and SiNx(C)) forms. The emphasis is on emerging trends and innovations in these SiNx material system technologies, with focus on Si and N source chemistries and thin film growth processes, including their primary effects on resulting film properties. It also illustrates that SiNx and its SiNx(C) derivative are the focus of an ever-growing research and manufacturing interest and that their potential usages are expanding into new technological areas.