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Volatile Higher Silane
Volatile higher silanes are low temperature, high deposition rate precursors. By appropriate selection of precursor and deposition conditions, silicon deposition can be shifted from amorphous hydrogenated silicon toward microcrystalline silicon structures. As the number of silicon atoms increases beyond two, electrons are capable of sigma–sigma bond conjugation. The dissociative adsorption of two of the three hydrogen atoms on terminal silicon atoms has a lower energy barrier.
Neopentasilane; Tetrasilylsilane; 2,2-Disilyltrisilane
Boiling Point: 132-4°
Molecular Weight: 152.52
Alternative Name: NPS
Specific Gravity: 0.805
HMIS Key: 3-4-3-X
Hydrolytic Sensitivity: 10: reacts extremely rapidly with moisture and oxygen - may be pyrophoric - sealed system required
Application: Employed in CVD epitaxy of silicon.1,2,3
Forms silicon nanowires by gold nanoparticle catalyzed deposition.4
Reference: 1. Sturm, J. et al. ECS Transactions, 2008, 16, 799.
2. Chung, K. et al. Appl. Phys. Lett. 2008, 92, 113506.
3. Singh, K. et al. U.S. Patent 7,645,339, 2010.
4. Kampken, B. et al. Beilstein J. Nanotech. 2012, 3, 535.
Additional Properties: Dipole moment: 0.0 debyeVapor pressure, 25°: 15 mmVapor pressure, 67°: 50 mm